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MOCVD SiC Coated Graphite Susceptor
| Qhov chaw ntawm keeb kwm: | Tuam Tshoj |
| Hom Npe: | Semixlab |
| Model Number: | MSCGS-01 |
| Certification: | ISO9001 |
| Yam Tsawg Tshaj: | 1 set |
| Nqe: | Tiv tauj rau Kev Hais Tus Nqi Tshwj Xeeb |
| Ntim Paub meej: | Pob khoom xa tawm txheem |
| Tus me nyuam lub sij hawm: | 35-40 Hnub Tom Qab Kev Pom Zoo |
| Ntsiab lus uas them: | T / T |
| Mov Muaj peev xwm: | 1000 teeb tsa / Hli |
Hauj lwm
1. Life extended by 300%+
The buffer layer technology enables the number of thermal shock cycles to be greater than 5,000 times (less than 1,500 times for conventional products).
The continuous operating temperature can reach 1650°C, and the coating shows no cracks or peeling.
2. Zero pollution guarantee
The purity of SiC coating is 6N grade (total amount of metal impurities < 0.5ppm).
Passed the SEMI standard particle release test (Class 10 cleanliness).
3. Thermal field uniformity upgrade
The temperature difference on the base surface is less than ±2°C (measured data for Φ300mm specification).
Supports rapid heating (20°C/s) without thermal deformation.
4. Zoo heev corrosion kuj
Resistant to corrosion by gases such as H2, NH3, and TMAl, with a service life of over 18 months.
The change rate of surface roughness is less than 5% (tested after 100 process cycles).
5. Compatible with mainstream models worldwide
Supports customization in diameters ranging from 50 to 500mm.
6. Full Life cycle cost optimization
The maintenance cycle has been extended to three times that of regular products.
The yield rate of epitaxial wafers has increased by 2-3%.
Lub tuam txhab muaj zog
Semixlab Technology Co., Ltd muaj 2 lub chaw tshawb fawb thiab kev txhim kho (R&D), 2 lub chaw tsim khoom, 12 kab tsim khoom, 150+ tus neeg ua haujlwm, thiab kev nqis peev R&D suav rau ntau dua 30%. Peb cov qauv khoom feem ntau yog siv rau hauv LED, IC integrated circuit, tiam peb semiconductor, photovoltaic thiab lwm yam lag luam. Semixlab muaj kev tshawb fawb thiab kev txhim kho zoo, kev tsim khoom thiab kev sim thiab kev txheeb xyuas kev sib xyaw ua ke. Tib lub sijhawm, peb pheej txhim kho peb cov thev naus laus zis thiab cov khoom siv nrog kev nqis peev ntawm kaum tawm lab ib xyoos.
Specifications
Key performance parameters
Project parameters
The base material is SGL isostatic pressed graphite
Coating thickness: 80-200μm (customizable)
The purity of the coating is ≥99.9999%
Qhov ceev: 1.85-1.90 g / cm³
Thermal conductivity: 125 W/m·K (RT)
Flexural strength ≥45 MPa
Operating temperature ≤1800°C (inert atmosphere)
Quality assurance system
Full-process traceability: Full data recording from graphite substrate to coating process.
Precision detection: SEM/EDS coating analysis, helium mass spectrometry leak detection, high-temperature thermal shock testing.
| Cov yam ntxwv ntawm lub cev ntawm CVD SiC txheej | |
| Khoom | Tus Nqi Qub |
| Crystal Structure | FCC β theem polycrystalline, feem ntau yog (111) kev taw qhia |
| ceev | 3.21 g / cm³ |
| Hardness | 2500 Vickers hardness (500g thauj khoom) |
| Cov nplej SiZe | 2 ~ 10μm |
| Tshuaj Purity | 99.99995% |
| Peev Xwm Kub | 640 XNUMXj kg-1·K-1 |
| Sublimation kub | 2700 ℃ |
| Kev Ua Tau Zoo | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| Thermal Kev Coj Ua | 300W·m-1·K-1 |
| Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
Basic physical properties of CVD SiC coating:
daim ntawv sau npe
Application scenarios or equipment: Aixtron Epi equipment
Cov xwm txheej tseem ceeb ntawm daim ntawv thov
● LED chip manufacturing: GaN blue/white LED epitaxial growth.
● Power semiconductors: SiC/GaN power devices (MOSFET, HEMT).
● 5G radio frequency devices: high frequency microwave radio frequency chip substrate.
● Laser diode: VCSEL, edge-emitting laser epitaxial process.
● Advanced packaging: Deposition of high-precision semiconductor thin films.
Txheej txheem cej luam ntawm cov saw hlau semiconductor chip epitaxy kev lag luam:
peb pab
Semixlab khoom khw
