CVD SiC Txheej Baffle
Lub CVD SiC Coating Baffle los ntawm Semixlab yog ib qho khoom siv sab hauv uas ua haujlwm tau zoo uas tsim los rau cov ntawv thov semiconductor heteroepitaxy siab heev. Tsim los rau GaN, SiC, thiab cov txheej txheem semiconductor epitaxy, lub SiC-coated baffle no ua kom zoo dua qhov kev faib tawm ntawm cov roj, ua kom cov cua sov ruaj khov, thiab txo cov khoom me me hauv MOCVD thiab CVD reactors. Nws qhov ntom ntom, tsis muaj qhov porous SiC nto tiv taus kev yaig los ntawm cov tshuaj lom neeg ua ntej, ua rau lub neej ntawm cov khoom ntev dua thiab txo qhov zaus txij nkawm. Peb txais tos koj cov lus nug.
Hauj lwm
Hauv kev tsim khoom semiconductor siab heev, kev ruaj khov ntawm cov txheej txheem hauv epitaxial reactors ncaj qha txiav txim siab qhov ua tau zoo ntawm cov khoom siv, cov txiaj ntsig, thiab kev ntseeg siab mus sij hawm ntev. Semixlab's CVD SiC Coating Baffle yog ib qho khoom siv ua haujlwm siab uas tau tsim los rau cov chaw loj hlob heteroepitaxial, suav nrog silicon (Si), silicon carbide (SiC), thiab cov txheej txheem semiconductor sib xyaw. Ua ke nrog kev tsim qauv precision nrog cov thev naus laus zis high-purity chemical vapor deposition (CVD) silicon carbide coating, cov khoom no muab kev tswj hwm roj zoo heev, kev tswj hwm cov khoom me me, thiab kev ruaj khov ntawm thaj chaw thermal rau cov platform epitaxial tiam tom ntej.
Hauv cov reactors epitaxial, tshwj xeeb tshaj yog hauv MOCVD lossis CVD reactors ua haujlwm saum 1000 ° C thiab hauv SiC epitaxy systems tshaj 1600 ° C, cov roj sab hauv dynamics thiab thermal uniformity cuam tshuam tseem ceeb rau kev tswj cov thickness ntawm txheej, kev faib tawm dopant, thiab qhov ceev ntawm crystal defect. CVD SiC-coated baffles ua haujlwm ua cov kev tswj hwm kev ntws tseem ceeb thiab cov khoom tiv thaiv hauv cov chav ua haujlwm. Lawv rov kho dua thiab ruaj khov cov roj ntws, txo qis kev ntxhov siab ze ntawm ntug wafer, thiab txhawb kev faib tawm precursor thoob plaws cov substrates loj.
Tshaj li kev tswj kev ntws, kev txwv tsis pub tsim cov khoom me me yog qhov tseem ceeb rau kev ua tiav cov khoom epitaxial siab. Kev tawg, microcracks, thiab kev ua qias tuaj ntawm cov khoom siv hauv chav ib txwm ua rau muaj cov khoom me me hauv qab micron uas ua rau cov khoom siv ua haujlwm tsis zoo. Semixlab's CVD SiC-coated baffles siv ultra-high-purity CVD SiC, muab qhov ceev, tawv, thiab tshuaj lom neeg tsis muaj zog. Cov txheej txheem no tsim cov khoom ruaj khov, tsis muaj qhov tsis zoo uas tiv taus kev yaig los ntawm cov pa roj corrosive (HCl, Cl₂, thiab silane derivatives) thaum tiv taus kev hloov pauv thermal tsis muaj kev puas tsuaj ntawm cov qauv. Qhov no txo cov khoom me me thiab txhim kho tag nrho cov khoom siv uptime.
Kev tswj cua sov sawv cev rau lwm txoj haujlwm tseem ceeb ntawm CVD SiC Coating Baffles hauv cov kab ke epitaxial. CVD silicon carbide lub zog ua kom sov siab thiab cov coefficient qis ntawm thermal expansion (CTE) pab txhawb kev faib cua sov sib npaug hauv chav. Thaum lub sijhawm kub siab, cov baffles ua haujlwm ua cov thermal stabilizers, txo cov kev hloov pauv kub hauv zos uas yuav ua rau muaj kev hloov pauv ntawm cov nqi loj hlob lossis kev koom ua ke ntawm dopant.

Semixlab siv cov qauv tswj xyuas zoo nruj heev thoob plaws kev xaiv cov khoom siv, CVD txheej deposition, machining precision, thiab kev tshuaj xyuas zaum kawg kom ntseeg tau tias cov txheej tuab sib xws, adhesion, purity, thiab dimensional stability. Semixlab tseem cog lus tias yuav muab kev txhawb nqa kev tshaj lij thiab cov khoom lag luam customized rau cov txheej txheem semiconductor epitaxial. Peb tos ntsoov yuav los ua koj tus khub mus sij hawm ntev hauv Suav teb.
Specifications
| Cov yam ntxwv ntawm lub cev ntawm CVD SiC txheej | |
| Khoom | Tus Nqi Qub |
| Crystal Structure | FCC β theem polycrystalline, feem ntau (111) taw qhia |
| ceev | 3.21 g / cm³ |
| Hardness | 2500 Vickers hardness (500g load) |
| Nthuav Loj | 2 ~ 10μm |
| Tshuaj Purity | 99.99995% |
| Peev Xwm Kub | 640 XNUMXj kg-1·K-1 |
| Sublimation kub | 2700 ℃ |
| Kev Ua Tau Zoo | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| Thermal Kev Coj Ua | 300W·m-1·K-1 |
| Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
peb pab

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