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SiC Coated graphite rhaub rau MOCVD
The Semixlab SiC Coated Graphite MOCVD Heater is a high-performance heated carrier designed for semiconductor manufacturing processes that uses chemical vapor deposition (CVD) to form a uniform, dense silicon carbide (SiC) coating on the surface of an ultra-high purity graphite substrate.
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Khoom Paub meej
The SiC Coated Graphite MOCVD Heater combines the excellent thermal conductivity of graphite with the high temperature and corrosion resistance of SiC coatings, and is widely used in metal-organic chemical vapor deposition (MOCVD) equipment to ensure stability and high purity in wafer epitaxy growth processes.
SiC Coated Graphite MOCVD Heater Product Features
1. Ultra-high purity and chemical stability
Purity ≥99.99995%: Our Graphite Heater is prepared under high temperature chlorination through the CVD process, which effectively avoids metal impurity contamination and meets the demand for ultra-clean environments in semiconductor manufacturing.
Anti-chemical corrosion: The dense and high hardness of SiC coating (Vickers hardness of 2500-2800) can resist the erosion of acids, alkalis, salts and organic solvents, which prolongs the service life of the equipment in the corrosive gas environment.
2. Zoo heev kub ua hauj
High temperature stability: it can withstand up to 3000°C in inert atmosphere, stable operation up to 2200°C in vacuum environment, and 1600-1700°C in oxidizing environment, which is suitable for the extreme conditions of MOCVD reaction chamber.
Low Coefficient of Thermal Expansion (4.5 x 10-⁶K-¹): This feature of MOCVD Graphite Heater effectively reduces coating cracking or peeling due to temperature changes, ensuring structural integrity under long-term thermal cycling.
3. Optimized thermal management performance
High Thermal Conductivity (200-300 W/mK): The high thermal conductivity of the Graphite MOCVD Heater determines that the product can quickly and uniformly transfer heat to achieve consistent wafer surface temperature distribution (±1°C), thereby effectively improving epitaxial layer uniformity.
Laminar Gas Flow Field Design: After continuous technology iteration and upgrading, our MOCVD Heater surface smoothness (Ra ≤ 0.8μm) and geometry optimization ensures uniform distribution of reactive gases and reduces deposition non-uniformity caused by turbulence.
Specifications
Technical Parameters Comparison and Advantages
| Cov yam ntxwv | Semixlab SiC coated heaters | Conventional graphite heaters |
| Maximum operating temperature (inert) | 3000 ° C | 2500 ° C |
| Tshuaj Purity | ≥99.99995% | ≤99.99 |
| Thermal conductivity | 300 W/mK | 120-150 W / mK |
| Txheej daim kab xev | 415 MPa (4-point bending) | 100-200Mpa |
| Typical life (cycles) | > 500 mus | 100-200 ncig mus |
Kev Tshaj Loj (Competitive Advantage)
Vim li cas Semixlab?
Customization: Semixlab is committed to providing customized products and technical services to our customers. We support customization of non-standard sizes (up to 360mm diameter) and coating thicknesses (20-500μm) to accommodate a wide range of equipment needs.
Global Certification: Our SiC Coated Graphite Heater is SEMI compliant, ISO 9001 certified, and our products are mainly exported to Europe and the United States, as well as Japan and South Korea, with a significant price/performance advantage.
Technical synergy: Semixlab has long maintained close cooperation with top research institutions in China, using patented coating technologies (such as CGT Carbon's SiC³ process) to optimize coating densities and thermal shock resistance.
