SiC coated halfmoon graphite qhov chaw

Cov khoom siv graphite ib nrab hli uas muaj SiC coated yog cov khoom tseem ceeb uas siv dav hauv cov txheej txheem silicon epitaxy thiab silicon carbide (SiC) epitaxy. Hauv cov reactors epitaxial, cov khoom no ua haujlwm ua cov qauv, cov pa roj ntws, thiab cov khoom tiv thaiv, cuam tshuam ncaj qha rau kev sib npaug ntawm zaj duab xis, cov yam ntxwv ntawm ntug, thiab kev ruaj khov ntawm cov txheej txheem mus sij hawm ntev. Lawv txoj kev tswj hwm thermal kom raug, kev ruaj khov ntawm tshuaj lom neeg, thiab kev ua qias tuaj tsawg heev yog qhov tseem ceeb rau kev ua haujlwm ntawm cov khoom siv thiab cov txiaj ntsig tsim khoom, ua rau lawv tseem ceeb rau cov khoom siv graphite hauv cov txheej txheem semiconductor epitaxial.

Hauv ob qho txheej txheem epitaxy silicon thiab silicon carbide, cov khoom graphite zoo li lub voj voog feem ntau nyob ze ntawm cov substrate lossis wafer ntug cheeb tsam, qhov twg cov roj ntws dynamics thiab qhov kub thiab txias gradients yog qhov rhiab heev tshaj plaws. Lub crescent geometry yog tsim tshwj xeeb los ua kom zoo dua qhov kev faib tawm roj hauv zos thiab thermal equilibrium, yog li txo cov teebmeem ntug uas tuaj yeem ua rau epitaxial txheej thickness variations, doping concentration fluctuations, lossis crystal defects.

Los ntawm qhov pom ntawm cov khoom siv sib xyaw, cov graphite substrate muaj cov thermal conductivity thiab machinability zoo heev, ua rau muaj kev tsim cov duab crescent nyuaj kom phim cov qauv tsim reactor tshwj xeeb. Txhawm rau kom ntseeg tau tias muaj kev sib raug zoo nrog cov chaw corrosive epitaxial, qhov chaw graphite yog coated nrog ib txheej tuab ntawm cov khoom siv high-purity silicon carbide (SiC). Cov txheej txheem SiC no ua haujlwm ua cov tshuaj tiv thaiv inert, qhia txog kev tiv thaiv corrosion zoo tiv thaiv hydrogen, HCl, thiab silicon-based precursor gases feem ntau siv hauv cov txheej txheem epitaxial. Yog li ntawd, cov khoom no tswj tau qhov ruaj khov ntawm cov qauv thiab qhov ruaj khov ntawm qhov chaw thaum lub sijhawm ua haujlwm kub ntev (feem ntau tshaj 1500 ° C hauv SiC epitaxy).

Los ntawm kev saib xyuas kev ua qias tuaj, cov khoom siv graphite uas muaj SiC coated ua lub luag haujlwm tseem ceeb hauv kev tswj kom muaj ib puag ncig huv si. Cov txheej txheem SiC tiv thaiv kev tsim cov khoom me me graphite thiab tiv thaiv kev tso tawm lossis kev nqus cov khoom tsis huv, pab cov fabs ua tau raws li cov kev cai nruj ntawm cov khoom me me thiab kev huv. Qhov no tseem ceeb heev hauv SiC epitaxy, qhov twg txawm tias cov khoom tsis huv kuj ua rau qhov zoo ntawm epitaxial crystal poob qis.

Piv rau cov graphite tsis muaj txheej lossis lwm cov ntaub ntawv, cov khoom siv graphite ib nrab hli uas muaj SiC ua tiav qhov sib npaug zoo tshaj plaws ntawm kev ua haujlwm ntev, kev ua haujlwm thermal, thiab kev siv nyiaj tsim nyog. Lawv lub neej ua haujlwm ntev txo qhov zaus txij nkawm thiab lub sijhawm tsis ua haujlwm hauv chav, thaum cov yam ntxwv ntawm qhov chaw ruaj khov pab txhawb rau kev ua haujlwm ib pawg mus rau ib pawg. Cov txiaj ntsig no ua rau lawv tseem ceeb heev rau cov khoom siv hauv cov kab ntau lawm Si/SiC epitaxial.

Ua ib lub tuam txhab tsim khoom thiab muab khoom siv semiconductor epitaxial ua lag luam hauv Suav teb, Semixlab ib txwm muab kev sab laj txog kev siv tshuab thiab kev daws teeb meem rau cov neeg siv khoom hauv kev lag luam. Peb txhawb kom cov tuam txhab tsim khoom semiconductor ua tiav cov txiaj ntsig zoo dua, ua kom cov txheej txheem rov ua dua tau zoo dua, thiab ua kom cov khoom siv ruaj khov dua thoob plaws kev loj hlob ntawm epitaxial. Peb tos ntsoov yuav los ua koj tus khub mus sij hawm ntev hauv Suav teb.