Ib leeg wafer epi graphite susceptor

ASM monolithic epitaxial tray is designed for high-performance silicon carbide (SiC), gallium nitride (GaN) and other third generation semiconductor epitaxial process, the product includes a set of graphite tray, graphite ring and other accessories, using high purity graphite substrate + vapor deposition silicon carbide coating composite structure, taking into account high temperature stability, chemical inertia and thermal field uniformity. It is the core bearing component of high-precision epitaxial sheet in mass production.

Nthuav Qhia:

1. Other names: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, single wafer susceptor.

2. Application: For high-performance silicon carbide (SiC), gallium nitride (GaN) and other third generation semiconductor epitaxial process.

Material innovation: graphite +SiC coating

Graphite

-Ultra-high thermal conductivity (>130 W/m·K), rapid response to temperature control requirements, to ensure process stability.

-Low thermal expansion coefficient (CTE: 4.6×10⁻⁶/°C), reduce high temperature deformation, prolong service life.

CVD SiC txheej

-Corrosion resistance. Resist attack by reaction gases such as H₂, HCl, and SiH₄. It avoids contamination of the epitaxial layer by volatilization of the base material.

-Surface densification: the coating porosity is less than 0.1%, which prevents the contact between graphite and wafer and prevents the diffusion of carbon impurities.

-High temperature tolerance: long-term stable work in the environment above 1600°C, adapt to the high temperature demand of SiC epitaxy.

Thermal field and airflow optimization design

Uniform thermal radiation structure

The susceptor surface is designed with multiple thermal reflection grooves, and the ASM device's thermal field control system achieves temperature uniformity within ±1.5°C (6-inch wafer, 8-inch wafer), ensuring consistency and uniformity of epitaxial layer thickness (fluctuation <3%).

Air steering technique

Edge diversion holes and inclined support columns are designed to optimize the laminar flow distribution of reaction gas on the wafer surface, reduce the difference in deposition rate caused by eddy currents, and improve doping uniformity.

Compatibility and reliability

Multi-scene adaptation

Compatible with 4H-SiC, 6H-SiC homoepitaxy, and GaN-on-SiC heteroepitaxy processes, support N /P type doping (such as N₂, Al doping).

Long life maintenance

The hardness of silicon carbide coating reaches 430 Gpa 4pt bend, 1300℃, the resistance to particle erosion is increased by more than 3 times, the service life of a single tray exceeds 5000 process hours, and the cost of comprehensive consumables is reduced.

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Technical Specifications Txheej txheem cej luam

Process consistency: Through the original matching design of ASM equipment, the adjustment time of thermal field and air flow is reduced.

Zero pollution commitment: SiC coatings pass SEMI standard metal impurity detection (Fe, Ni, etc <1ppb).

Quick response maintenance: Modular tray structure, support for online replacement and technical support.