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CVD Tantalum Carbide (TaC) Txheej

CVD Tantalum Carbide (TaC) Txheej

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TaC coated LED epi susceptor
TaC coated LED epi susceptor

TaC Coated LED epi susceptor


Qhov chaw ntawm keeb kwm: Tuam Tshoj
Hom Npe: Semixlab
Model Number: TaC coated LED epi susceptor-01
Certification: ISO9001
Yam Tsawg Tshaj: Yuav tsum tau sib tham ua ntej
Nqe: Tiv tauj rau Kev Hais Tus Nqi Tshwj Xeeb
Ntim Paub meej: Pob khoom xa tawm txheem
Tus me nyuam lub sij hawm: 30-45 Hnub Tom Qab Kev Pom Zoo
Ntsiab lus uas them: T / T
Mov Muaj peev xwm: 100 units / Hli
Hauj lwm

TaC coated LED epi susceptor adopts high purity tantalum carbide (TaC) coating technology, which is specially designed for MOCVD (metal organic chemical vapor deposition) equipment and suitable for high temperature deposition process of LED epitaxial wafers. The product has excellent high temperature resistance, corrosion resistance and thermal stability, which can significantly reduce pollution and particle shedding, and extend service life. It is an ideal choice for improving LED epitaxial wafer yield and production efficiency.

daim ntawv thov:

TaC coated LED epi susceptor is specially designed for MOCVD equipment and is mainly used in LED epitaxial wafer production, especially for the epitaxial growth of gallium nitride (GaN)-based blue and ultraviolet LEDs. It can also meet the manufacturing needs of SiC/GaN power semiconductor devices and is suitable for high-temperature CVD, MBE and other material deposition experiments in scientific research institutes.

Cov kev pabcuam uas muab tau:

kev tshuaj xyuas qhov xwm txheej ntawm cov neeg siv khoom siv, cov ntaub ntawv sib phim, kev daws teeb meem kev siv tshuab.

Tuam txhab profile:

Semixlab muaj 2 lub chaw soj nstuam, ib pab neeg kws tshaj lij nrog 20 xyoo ntawm kev paub txog khoom siv, nrog R&D thiab kev tsim khoom, kev sim thiab kev txheeb xyuas.

Specifications

Kev Tsis

project parameter
Cov khoom siv substrate High purity isostatic graphite (purity ≥99.99%)
Txheej khoom Tantalum Carbide (TaC)
Siv tau qhov kub thiab txias ≤1350°C (continuous working temperature 1200°C)
Txheej thickness 50-200μm (customizable)
Qhov ntev Support 2/4/6 inch epitaxial wafer loading (support OEM customization)
daim ntawv sau npe

Cov teb tseem ceeb ntawm daim ntawv thov

Daim ntawv thov kev taw qhia Yam xwm txheej
LED epitaxial wafer production Suitable for GaN-based epitaxial growth of blue light, ultraviolet LEDs, etc.
Cov khoom siv fais fab SiC and GaN power semiconductor MOCVD process.
Kev tshawb fawb teb High temperature CVD, MBE and other material deposition experiments.

Kev pom zoo rau kev txheeb xyuas cov saw hlau ecological

Semixlab TaC coated LED epi susceptor's ecological chain verification covers raw materials to production, has passed international standard certification, and has a number of patented technologies to ensure its reliability and sustainability in the semiconductor and new energy fields.

Cov txheej txheem thov ib txwm muaj

Raw Material Preparation (High-purity graphite inspection) → Substrate Fabrication (Isostatic pressing) → TaC Coating Process (CVD deposition) → Post-Processing (Precision polishing) → Quality Inspection → Packaging & Delivery

As LED technology develops towards smaller sizes and higher precision such as Mini LED and Micro LED, the stability and process control requirements of MOCVD equipment are becoming increasingly higher. The promotion of TaC coated LED epi susceptor can not only improve the efficiency of existing LED production, but also provide a more reliable manufacturing foundation for the next generation of display technology.

Yog xav paub ntxiv txog cov lus qhia txog kev siv tshuab, cov ntawv dawb, lossis cov qauv kuaj, thov hu rau peb Pab Pawg Txhawb Nqa Kev Siv Tshuab kom paub seb Semixlab tuaj yeem txhim kho koj cov txheej txheem ua haujlwm li cas.

Kev Tshaj Loj (Competitive Advantage)

Semixlab TaC coated LED epi susceptor core advantages

Super high temperature resistance

TaC-coated LED epitaxial susceptors are made of high-purity tantalum carbide material, which can work stably for a long time in high-temperature environments above 1200°C. Even under the extreme temperature conditions of the MOCVD process, the coating will not crack or peel off, ensuring the uniformity and consistency of the epitaxial growth process and effectively improving product yield.

Zoo heev corrosion kuj

During the manufacturing process of LED epitaxial wafers, the susceptor needs to be exposed to corrosive gas environments such as H2 and NH3 for a long time. TaC coating has extremely strong chemical inertness and can effectively resist gas erosion and avoid impurities generated by oxidation or reaction, thereby ensuring the purity and optoelectronic performance of the epitaxial wafer.

Low thermal deformation

The thermal expansion coefficient of the TaC coating is highly matched to that of the graphite substrate, and the susceptor can maintain an extremely low thermal deformation rate even during rapid temperature rise and fall. This feature can greatly reduce the risk of epitaxial wafer warping, ensure uniform growth of the epitaxial layer, and improve product consistency.

Qhov chaw tiav siab

The susceptor surface is precisely polished, with the roughness controlled below 0.5μm, effectively reducing the defect rate during epitaxial growth. The smooth surface can also reduce the adhesion between the epitaxial wafer and the susceptor, making it easier to remove the wafer and reducing the risk of wafer breakage.

Lub neej ntev tsim

Compared with traditional graphite susceptors, TaC coating has better wear resistance and corrosion resistance, and its service life can be increased by more than 3 times. This not only reduces the frequency of consumable replacement, but also reduces process fluctuations caused by susceptor aging, which can significantly reduce production costs in the long run.

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