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TaC Coated Porous Graphite Phaj
Kev tsim khoom siv semiconductor xav tau cov ntaub ntawv uas tuaj yeem tiv taus cov xwm txheej hnyav thaum tswj hwm qhov huv thiab kev ua tau zoo. Lub phaj graphite semixlab TaC coated porous yog tsim tshwj xeeb rau qhov chaw no. Nws muab cov txiaj ntsig tshwj xeeb ntawm cov graphite porous purity siab nrog rau Tantalum Carbide (TaC) txheej uas ruaj khov thiab tiv thaiv tau zoo, muab cov kev daws teeb meem siab heev rau cov ntawv thov uas xav tau tshaj plaws hauv kev tsim khoom siv semiconductor.
Hauj lwm
Peb lub phaj graphite uas muaj TaC coated yog cov khoom siv sib xyaw ua ke zoo uas tsim los kov yeej cov kev txwv ntawm cov khoom siv graphite ib txwm muaj nyob rau hauv qhov kub thiab txias, huab cua ua haujlwm. Lub hauv paus yog cov khoom siv graphite porous, ib daim ntawv graphite uas tsis hnyav, ruaj khov heev nrog lub network ntawm cov qhov sib txuas. Cov qauv tshwj xeeb no muab thaj chaw siab thiab cov khoom siv thermal zoo heev.
Siv cov txheej txheem Chemical Vapor Deposition (CVD) uas raug ntsuas kom meej, ib txheej Tantalum Carbide (TaC) tuab thiab nyias raug siv rau saum npoo. Cov txheej txheem ceramic refractory no ua haujlwm ua ib qho kev tiv thaiv zoo, kaw cov graphite uas muaj qhov porous thiab txhim kho nws cov kev ua haujlwm mechanical, chemical, thiab thermal.
Specifications
| Lub cev muaj zog ntawm TaC txheej | |
| ceev | 14.3 (g / cm³) |
| Tshwj xeeb emissivity | 0.3 |
| Thermal expansion coefficient | 6.3*10-6/K |
| Hardness (HK) | 2000 HK ib |
| Kuj | 1 × 10-5 Aw* cm |
| Thermal ruaj khov | <2500 ℃ |
| Graphite loj hloov | -10 ~ 20 hli |
| Txheej thickness | ≥20um tus nqi raug (35um ± 10um) |
daim ntawv sau npe
Cov ntawv thov hauv Kev Tsim Khoom Siv Semiconductor Qib Siab
Qhov kev sib koom ua ke ntawm cov graphite porous thiab TaC txheej ua rau cov khoom siv no yog ib qho tseem ceeb hauv ntau cov txheej txheem semiconductor tseem ceeb, tshwj xeeb tshaj yog cov uas muaj qhov kub siab thiab cov pa roj corrosive. Nws cov ntawv thov tseem ceeb suav nrog:
● Silicon Carbide (SiC) Kev Loj Hlob Crystal: Cov phaj uas muaj txheej TaC yog qhov tseem ceeb rau cov cub tawg uas siv lub cev Physical Vapor Transport (PVT). Lawv siv ua cov crucibles, cov boards rwb thaiv tsev, cov flow guides, thiab cov noob. Cov txheej no tiv thaiv cov pa roj carbon ntawm SiC crystal, ua rau cov crystals zoo dua, tsis muaj qhov tsis zoo nrog cov nqi tsim khoom zoo dua.
●Kev Tso Cov Pa Tshuaj Uas Muaj Hlau Thiab Organic (MOCVD): Hauv MOCVD reactors rau kev tsim cov khoom siv siab heev xws li GaN thiab GaAs, peb cov phaj ua haujlwm ua cov susceptors thiab wafer carriers. Lub txheej TaC muab kev tiv thaiv zoo rau cov pa roj uas muaj zog heev xws li hydrogen (H2) thiab ammonia (NH3), ua kom lub neej ntawm cov khoom ntev dua thiab tswj cov txheej txheem huv.
●Kev Kub Siab Annealing & Epitaxy: Cov khoom siv lub thermal stability thiab tshuaj inertness ua rau nws zoo tagnrho rau cov khoom siv hauv qhov cub siv rau hauv cov txheej txheem kub siab annealing thiab epitaxial loj hlob, ua kom muaj cua sov sib npaug thiab tiv thaiv kev ua qias tuaj.
Kev Tshaj Loj (Competitive Advantage)
Cov Khoom Siv Tseem Ceeb thiab Cov Zoo
Lub phaj graphite porous uas muaj TaC coated yog txhais los ntawm cov khoom zoo tshaj plaws uas txhais tau ncaj qha mus rau hauv cov txiaj ntsig zoo rau kev ua haujlwm rau koj txoj kab tsim khoom.
1. Kev Ruaj Ntseg Thermal thiab Mechanical Stability Heev
Cov cuab yeej: Tswj kev ruaj khov ntawm cov qauv txog li 2200 ° C (hauv huab cua tsis oxidizing).
Advantage: Qhov kev ruaj khov thermal zoo kawg no ua rau lub sijhawm voj voog sai dua thiab siv tau rau hauv cov txheej txheem kub siab tshaj plaws yam tsis muaj kev puas tsuaj ntawm cov khoom lossis cov duab deformation. Lub txheej TaC kuj tseem ua rau lub zog kho tshuab thiab kev tiv thaiv kev sib txhuam ntawm cov graphite porous, ua rau nws ruaj khov dua thiab tiv taus chipping thiab hnav.
2. Kev Tshuaj Lom Zem Zoo Tshaj Plaws & Kev Huv Si
Cov cuab yeej: Cov txheej TaC tiv taus ntau yam roj corrosive, suav nrog H2, HCl, thiab NH3. Cov khoom siv muaj qib impurity qis heev, feem ntau < 5ppm.
Advantage: Qhov no muab ib qho thaiv uas tsis muaj roj thiab tiv thaiv kom cov pa phem tawm ntawm cov graphite substrate. Qhov no txo cov pa phem thiab cov khoom me me uas poob tawm, uas yog cov ua rau muaj qhov tsis zoo thiab cov txiaj ntsig qis hauv kev tsim cov semiconductor.
3. Optimized Thermal Management
Cov cuab yeej: Cov khoom siv muaj cov thermal conductivity siab (120−160W/m⋅K rau porous graphite) thiab qhov emissivity tshwj xeeb ntawm kwv yees li 0.3.
Advantage: Qhov kev sib xyaw ua ke ntawm cov khoom no ua kom muaj kev faib cua sov zoo heev thiab sib npaug thoob plaws lub phaj nto. Qhov no yog qhov tseem ceeb rau cov txheej txheem xws li kev loj hlob ntawm cov siv lead ua thiab epitaxy, qhov twg qhov kub thiab txias yuav tsum tau txo qis kom ua tiav cov yeeb yaj kiab thiab cov siv lead ua zoo, sib npaug.
Nrog ntau xyoo ntawm kev txawj ntse hauv kev siv cov txheej txheem ceramic thiab cov kev daws teeb meem graphite rau cov ntawv thov semiconductor, Semixlab xa cov khoom tsim los rau kev ua haujlwm siab tshaj plaws, kev ua kom raug, thiab kev ruaj khov. Peb lub phaj graphite porous TaC coated yog qhov kev xaiv zoo tshaj plaws rau cov tuam txhab semiconductor nrhiav kev daws teeb meem txhim khu kev qha, huv si, thiab kav ntev. Peb txais tos koj cov lus nug ntxiv.
peb pab
Semixlab khoom khw
