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Tantalum Carbide TaC Coated Npog
Lub Tantalum Carbide (TaC) Coated Npog los ntawm Semixlab yog tsim los kom ntseeg tau tias muaj kev ruaj khov thermal thiab kev huv hauv cov chaw semiconductor epitaxy. Tsim tshwj xeeb rau Si, SiC, thiab GaN epitaxial reactor platforms, TaC coated nto tiv taus qhov kub thiab txias heev thiab cov pa tshuaj lom neeg hnyav, txo qis kev tsim cov khoom me me thiab kev puas tsuaj ntawm chav. Los ntawm kev tswj hwm qhov chaw ruaj khov sab hauv thiab txo cov ntsiab lus ua qias tuaj, cov txheej txheem no txhawb nqa cov txheej epitaxial zoo sib xws, lub sijhawm ua haujlwm ntev, thiab cov txiaj ntsig wafer zoo dua thoob plaws cov khoom semiconductor ntau. Peb txais tos koj cov lus nug.
Hauj lwm
Ua ib lub tuam txhab ua lag luam hauv Suav teb uas tsim cov Tantalum Carbide (TaC) coated cover, Semixlab's TaC coated cover plates yog tsim los rau cov chaw loj hlob ntawm semiconductor epitaxial. Hauv cov chaw no, qhov kub thiab txias, kev ruaj khov ntawm tshuaj lom neeg, thiab kev tswj kev ua qias tuaj yog cov yam tseem ceeb uas txiav txim siab txog kev ua haujlwm ntawm cov khoom siv. Cov coated cover no yog tsim tshwj xeeb rau Si, SiC, thiab GaN epitaxial reactors, ua lub luag haujlwm tseem ceeb hauv kev sib khi thiab kev tiv thaiv hauv chav tshuaj tiv thaiv, tiv thaiv cov nplaim sab hauv los ntawm kev xeb thiab kev ua qias tuaj ntawm cov khoom me me.
Kev loj hlob ntawm cov semiconductor epitaxial, xws li Si/SiC/GaN epitaxy, yuav tsum tau tsim cov zaj duab xis nyias uas tsis muaj qhov tsis zoo nyob rau hauv cov txheej txheem nyuaj heev. Hydrogen, cov pa roj chlorine, ammonia, thiab hydrocarbon precursors txuas ntxiv ua rau hauv cov chambers ntawm qhov kub feem ntau tshaj 1500 ° C. Cov ntaub thaiv chamber ib txwm muaj kev puas tsuaj sai sai nyob rau hauv cov tshuaj lom neeg thiab thermal kev ntxhov siab no, ua rau cov khoom me me poob, cov hlau ua qias tuaj, thiab luv luv lub sijhawm txij nkawm. Peb cov TaC coated npog, nrog lawv cov melting point ultra-high (kwv yees li 3880 ° C), cov plasma zoo dua thiab cov tshuaj tiv thaiv, thiab cov qauv txheej txheem ntom ntom, qis porosity, zoo suppress cov tshuaj tiv thaiv saum npoo. Qhov no ua kom ntseeg tau tias sab hauv chamber huv si, txo cov txheej txheem tsim qhov tsis zoo xws li cov khoom me me, qhov chaw pitting, thiab stacking fault propagation ntawm wafer.
Hauv cov reactors epitaxial, kev sib xws ntawm thermal thiab kev ruaj khov ntawm cov roj yog qhov tseem ceeb rau kev sib xws ntawm wafer-rau-wafer. Los ntawm kev tswj hwm kev ncaj ncees ntawm cov qauv thiab cov ciam teb tsis muaj zog, cov npog TaC coated pab tswj hwm qhov sib npaug ntawm chav thiab thermal equilibrium, ua kom muaj kev loj hlob ntawm epitaxial txheej thiab kev sib xyaw ua ke ntawm dopant thoob plaws ntau lub wafers. Los ntawm kev txo qis kev ua qias tuaj thiab txuas ntxiv lub neej kev pabcuam, fabs tuaj yeem ua tiav cov txiaj ntsig zoo hauv kev ua haujlwm: txo qis lub sijhawm tsis ua haujlwm, txo qis tag nrho cov nqi ntawm kev muaj, cov khoom siv ua haujlwm zoo, thiab kev tswj hwm cov txheej txheem nruj dua.
Cov ntaub thaiv npog TaC ntawm Semixlab yog tsim los ntawm kev siv cov thev naus laus zis CVD Tantalum Carbide txheej txheem siab heev, kev tswj hwm kev nplaum microstructure, thiab kev ntsuas qhov tseeb kom ntseeg tau tias cov txheej txheem ruaj khov, kev sib npaug ntawm cov tuab, thiab kev tiv thaiv thermal shock. Cov ntaub thaiv tiv thaiv tuaj yeem tsim tshwj xeeb rau cov cub tawg, MOCVD, LPCVD, thiab cov platforms ntsug SiC / Si epitaxial. Peb tos ntsoov yuav los ua koj tus khub mus sij hawm ntev hauv Suav teb.
peb pab
Semixlab khoom khw
