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CVD Silicon Carbide (SiC) Txheej

CVD Silicon Carbide (SiC) Txheej

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CVD SiC Wafer Carrier
CVD SiC Wafer Holder
CVD SiC Wafer Carrier
CVD SiC Wafer Holder

CVD SiC Wafer Holder


Cov tuav wafer SiC ntawm Semixlab yog ua los ntawm cov graphite isostatic siab, tom qab ntawd coated nrog cov txheej CVD silicon carbide siab. Lawv tau tsim rau cov xwm txheej nyuaj hauv MOCVD thiab epitaxy reactors. Qhov tshwm sim: kev sib xws zoo thermal thoob plaws wafer, thiab kev ua qias tuaj tsawg heev - uas ncaj qha pab koj cov txiaj ntsig thiab kev ua haujlwm ntawm lub cuab yeej.

Hauj lwm

Hauv cov khoom siv semiconductor epitaxy - zoo li GaN-on-Si, GaN-on-sapphire, lossis MicroLED fabrication - lub wafer holder (qee zaum hu ua SiC-coated susceptor) yog ib feem tseem ceeb. Nws nyob nruab nrab ntawm lub tshuab cua sov thiab lub wafer thiab tswj feem ntau ntawm kev hloov pauv thermal.

Vim li cas cov engineers thiaj xaiv Semixlab SiC wafer holders?

● Kev huv ntawm 7-nines (tag nrho cov hlau < 5 ppm) - Peb siv cov txheej txheem CVD tshwj xeeb (tsim los ntawm Prof. Shaolong He) uas ua rau cov hlau me me xws li Fe, Cu, thiab Ni tsawg heev. Qhov ntawd txhais tau tias muaj tsawg dua qhov tsis zoo ntawm cov lattice thaum lub sijhawm loj hlob ntawm GaN.

Kev sib npaug zoo ntawm cov cua sov (± 1%) - Zaj duab xis CVD SiC muaj cov cua sov conductivity siab (~ 300 W / m·K). Cov cua sov kis tau sai thiab sib npaug, uas pab txo cov wafer bow thiab kev ntxhov siab thermal.

Muaj zog tiv taus H₂ thiab NH₃ xeb - Tsis zoo li graphite liab qab lossis quartz, peb cov txheej SiC ntom ntom tseem nyob twj ywm hauv qab qhov kub siab ammonia thiab hydrogen ntws (900–1200 °C). Tsawg dua cov khoom me me poob, thiab qhov khoom kav ntev dua 3–5 zaug.

Kev sib phim CTE - Ib txheej hloov pauv tshwj xeeb ua rau cov coefficient ntawm thermal expansion ntawm lub txheej thiab graphite sib phim zoo. Tsis muaj delamination lossis tawg, txawm tias thaum lub sijhawm nce thiab nqis sai.

Specifications
parameter Tus Nqi Qub Vim Li Cas Nws Thiaj Muaj Teeb Meem
Txheej khoom 99.99999% CVD SiC Tsis muaj ion leakage lossis hnyav hlau contamination
Substrate Cov graphite isostatic siab Tuav lub zog ntawm 1600 ° C
Thermal conductivity ~300 W/m·K (ntawm RT) Txawm tias EPI txheej thickness
Txheej hardness ~2500 HV (Vickers) Tiv taus kev hnav los ntawm kev thauj khoom / tshem tawm tsis siv neeg
Nto saum npoo av Ra < 0.2 μm Kev nplaum tsawg dua ntawm cov polymers thiab cov khoom lag luam
compatibility customization Kev ua kom raug raws li koj cov kev xav tau tshwj xeeb
daim ntawv sau npe

Cov xwm txheej tseem ceeb ntawm daim ntawv thov

● GaN-on-Si / GaN-on-sapphire epitaxy – Tseem ceeb rau cov khoom siv fais fab thiab RF chips, qhov twg qhov kev ruaj khov thermal hauv zos cuam tshuam ncaj qha rau kev txav mus los ntawm hluav taws xob ntawm txheej GaN.

● MicroLED thiab cov zaub siab heev - Xav tau qhov huv siab heev thiab muaj tsawg tsawg yam khoom me me, uas peb lub tuav muab rau cov teeb LED siab.

● Kev loj hlob ntawm SiC siv lead ua (PVT) - Ua haujlwm ua tus nqa khoom ua tau zoo rau cov khoom siv SiC, thiab tuaj yeem txhawb nqa kev loj hlob txog li ~ 1.46 mm / h.

● Kev ua haujlwm kub sai (RTP) - Lub tuav tuaj yeem tiv taus kev poob siab kub heev thaum lub sijhawm ua kom sov sai yam tsis muaj kev tawg me me.

Kev Tshaj Loj (Competitive Advantage)

Cov txiaj ntsig ntawm Semixlab

Peb tsis yog tsuas yog tus neeg muag khoom xwb - peb sim ua tus khub tiag tiag rau koj cov kev xav tau thermal field. Semixlab tau tsim los ntawm cov kws tshawb fawb los ntawm Suav Academy of Sciences, thiab peb khiav ntau dua 12 kab tsim khoom CVD. Peb kuj muaj 5-axis CNC machining hauv tsev, yog li peb tuaj yeem ua cov tuav wafer nrog kev kam rau siab li ± 0.01 hli. Qhov ntawd txhais tau tias lawv poob rau hauv koj cov cuab yeej thoob ntiaj teb yam tsis muaj kev sib txuas ntxiv.

peb pab

Semixlab khoom khw

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