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CVD SiC ib leeg wafer susceptor
| Qhov chaw ntawm keeb kwm: | Tuam Tshoj |
| Hom Npe: | Semixlab |
| Model Number: | 6SGWS-01 |
| Certification: | ISO9001 |
| Yam Tsawg Tshaj: | 1 set |
| Nqe: | Tiv tauj rau Kev Hais Tus Nqi Tshwj Xeeb |
| Ntim Paub meej: | Pob khoom xa tawm txheem |
| Tus me nyuam lub sij hawm: | Lub Sij Hawm Xa Khoom: 45-60 Hnub Tom Qab Kev Pom Zoo |
| Ntsiab lus uas them: | T / T |
| Mov Muaj peev xwm: | 400 teeb tsa / Hli |
Hauj lwm
Cov xwm txheej thov lossis cov khoom siv: AMTA epitaxial khoom siv
Kev ntshiab siab heev (≤100ppb, ICP-E10 tau ntawv pov thawj) thiab kev ruaj khov thermal/chemical zoo heev rau kev loj hlob ntawm GaN, SiC, thiab silicon-based epi-layers uas tiv taus kev ua qias tuaj. Tsim los ntawm kev siv tshuab CVD precision, nws txhawb nqa 6”/8”/12” wafers, ua kom muaj kev ntxhov siab thermal tsawg kawg nkaus, thiab tiv taus qhov kub thiab txias heev txog li 1600°C.
Lub tuam txhab muaj zog
Semixlab Technology Co., Ltd muaj 2 lub chaw tshawb fawb thiab kev txhim kho (R&D), 2 lub chaw tsim khoom, 12 kab tsim khoom, 150+ tus neeg ua haujlwm, thiab kev nqis peev R&D suav rau ntau dua 30%. Peb cov qauv khoom feem ntau yog siv rau hauv LED, IC integrated circuit, tiam peb semiconductor, photovoltaic thiab lwm yam lag luam. Semixlab muaj kev tshawb fawb thiab kev txhim kho zoo, kev tsim khoom thiab kev sim thiab kev txheeb xyuas kev sib xyaw ua ke. Tib lub sijhawm, peb pheej txhim kho peb cov thev naus laus zis thiab cov khoom siv nrog kev nqis peev ntawm kaum tawm lab ib xyoos.
Specifications
CVD SiC ib leeg wafer susceptor feem ntau yog siv rau hauv cov khoom siv silicon epitaxy, cov khoom siv yog imported graphite + CVD SiC txheej.
Cov ntsiab lus tseem ceeb: silicon carbide txheej thiab graphite khoom:
| Lub cev muaj zog ntawm isostatic graphite | ||
| Khoom | Tsev | Tus Nqi Qub |
| Kev ceev ntau | g / cm³ | 1.83 |
| Hardness | H.S.D. | 58 |
| Hluav taws xob Resistivity | μΩ m | 10 |
| Kev Ua Tau Zoo | MPa | 47 |
| Hloov zog | MPa | 103 |
| Tensile Zog | MPa | 31 |
| Young's Modulus | GPa | 11.8 |
| Thermal Expansion (CTE) | 10-6K-1 | 4.6 |
| Thermal Kev Coj Ua | W`m-1`K-1 | 130 |
| Nruab Nrab Loj Loj | μm | 8-10 |
| Porosity | % | 10 |
| Tshauv Ntsiab Lus | ppm | ≤5 (tom qab ua kom huv) |
| Cov yam ntxwv ntawm lub cev ntawm CVD SiC txheej | |
| Khoom | Tus Nqi Qub |
| Crystal Structure | FCC β theem polycrystalline, feem ntau (111) taw qhia |
| ceev | 3.21 g / cm³ |
| Hardness | 2500 Vickers hardness (500g load) |
| Nthuav Loj | 2 ~ 10μm |
| Tshuaj Purity | 99.99995% |
| Peev Xwm Kub | 640 J`kg-1`K-1 |
| Sublimation kub | 2700 ℃ |
| Kev Ua Tau Zoo | 415 MPa RT 4-point |
| Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| Thermal Kev Coj Ua | 300W`m-1`K-1 |
| Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
daim ntawv sau npe
Cov ntawv tseem ceeb:
Ua ib qho khoom siv hauv AMTA epitaxy khoom siv, peb tuaj yeem muab 6 nti 8 nti 12 nti wafer susceptor.
CVD SiC ib leeg wafer susceptor hauv AMTA epitaxy khoom siv:
1. Kev txhawb nqa wafer thiab kev sib xyaw ua ke ntawm thaj chaw thermal
Ua lub luag haujlwm tseem ceeb ntawm CVD SiC ib leeg wafer susceptor hauv AMTA epitaxy khoom siv Hauv MOCVD, CVD thiab lwm yam khoom siv epitaxy, susceptor ua haujlwm ua tus nqa wafer, thiab hloov pauv cua sov mus rau qhov chaw wafer los ntawm kev tiv thaiv cua sov lossis RF cua sov kom ntseeg tau tias kev loj hlob ntawm cov txheej epitaxial (piv txwv li GaN, SiC).
Nws txoj kev tsim cov thermal conductivity siab txo qhov kub thiab txias ntawm ntug thiab nruab nrab, tswj qhov kub thiab txias sib npaug hauv ± 1 ° C thiab zam kev puas tsuaj ntawm cov khoom siv.
2. Kev Tiv Thaiv Kev Ua Phem Tshuaj
Cov khoom siv graphite uas raug rau cov pa roj ua haujlwm ncaj qha feem ntau yuav oxidize los ua CO₂ lossis hmoov, ua rau lub chamber ua qias tuaj. CVD SiC txheej ua haujlwm ua ib txheej tiv thaiv kom cais graphite ntawm cov pa roj corrosive thiab txo cov khoom me me ntawm qhov chaw wafer.
Piv txwv li, hauv GaN epitaxy txheej txheem, lub txheej tuaj yeem tiv taus qhov kev yaig ntawm cov precursors xws li NH₃ thiab TMGa, thiab lav qhov huv ntawm zaj duab xis.
3. Kev hloov kho ntawm ntau yam txheej txheem epitaxial
Cov semiconductors tiam thib peb: rau SiC lossis GaN epitaxy ntawm SiC substrates, kom ua tau raws li qhov yuav tsum tau ua ntawm cov khoom siv hluav taws xob siab rau cov yeeb yaj kiab tuab thiab cov nqi qis.
Kev tsim khoom Micro-LED: los txhawb kev tso qhov chaw siab thiab kev tswj hwm thermal ntawm cov wafers me me (piv txwv li, 8 nti), thiab kom txo qhov wavelength faib dispersion.
Kev Tshaj Loj (Competitive Advantage)
Cov yam ntxwv ntawm cov khoom siv: kev ua tau zoo heev ntawm CVD SiC
1. Kev huv siab heev thiab cov qauv ntom ntom
Cov txheej silicon carbide (SiC), uas tau muab tso rau ntawm cov tshuaj lom neeg vapor deposition (CVD), ua tiav cov qib tsis huv ntawm ≤100ppb (E10 tus qauv) raws li tau txheeb xyuas los ntawm ICP-MS (Inductively Coupled Plasma Mass Spectrometry). Qhov kev ntshiab siab heev no txo qhov kev pheej hmoo ntawm kev ua qias tuaj thaum lub sijhawm loj hlob epitaxial, ua kom muaj qhov zoo ntawm cov siv lead ua rau cov ntawv thov tseem ceeb xws li gallium nitride (GaN) thiab silicon carbide (SiC) wide-bandgap semiconductor manufacturing.
Cov qauv txheej yog ntom thiab sib xws, nrog rau qhov tsis sib xws ntawm qhov chaw, uas txo qhov kev pheej hmoo ntawm cov khoom me me thiab ua tau raws li cov qauv siab ntawm cov chav huv semiconductor.
2. Kev tiv thaiv ib puag ncig hnyav heev
Kev kub siab ua haujlwm: Nws tuaj yeem tswj tau qhov ruaj khov ntawm physicochemical ntawm 1600 ° C, uas yog siab dua qhov oxidation threshold ntawm graphite substrate (kwv yees li 400 ° C), ua rau nws lub neej ua haujlwm ntev dua.
Kev Tiv Thaiv Kev Xeb: Tiv taus cov pa roj corrosive xws li Cl₂, H₂ thiab plasma erosion, tsim nyog rau MOCVD, MBE thiab lwm yam kev ua haujlwm hnyav.
3. Kev ua haujlwm thermal zoo heev
Kev ua kom sov siab txog li 300 W / mK ua kom ntseeg tau tias cov wafers raug cua sov sib npaug, txo cov txheej txheem epitaxial thickness deviation (piv txwv li, teeb meem hloov pauv wavelength), thiab txhim kho cov txiaj ntsig ntawm LEDs, cov khoom siv fais fab, thiab lwm yam khoom.
Tus coefficient ntawm thermal expansion (4 × 10-⁶ / K) yog ze rau qhov ntawm graphite substrate, uas zam kev tawg lossis tev ntawm lub txheej vim qhov kub hloov pauv.
4. Lub zog thiab kev ua haujlwm ntev
Lub zog flexural txog li 470 MPa, muaj peev xwm tiv taus qhov kub thiab txias siab thiab kub qis thiab kev ntxhov siab ntawm lub tshuab, txo qhov zaus txij nkawm.
Tam sim no, qhov purity ntawm peb cov silicon carbide txheej tuaj yeem ncav cuag E10 hauv ICP xeem, uas yog li 100 ppb, thiab qib purity no yog cov qib siab tshaj plaws hauv Suav teb.
peb pab
Semixlab khoom khw
