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SiC Coated Teeb Disc
The SiC Coated Set Disc carefully crafted by Semixlab is designed to meet the stringent requirements of semiconductor customers for high temperature resistance, corrosion resistance, and low pollution components in high temperature epitaxial processes such as MOCVD. This product is made of high-purity silicon carbide (SiC) coating and high-quality graphite material, which have excellent thermal stability and chemical inertness, and can significantly improve process stability and consistency of epitaxial film layers.
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SiC Coated Set Disc Composition
Semixlab SiC Coated Set Disc is a wafer carrier designed for Aixtron MOCVD equipment. It is mainly composed of the following two parts:
1. Substrate material: high-purity isostatic graphite
Material features: extremely high thermal conductivity (up to 180 W/m·K), strong stability at high temperatures, not easy to deform or crack.
Advantages: Provides good thermal uniformity and structural strength for wafers, which is an important basis for ensuring the consistency of the growth process.
2. Surface coating: CVD deposition of high-purity SiC (silicon carbide)
Deposition method: Plasma-enhanced CVD or thermal CVD process is used, and the coating thickness is controlled between 50–200μm.
Feature description: The surface layer is dense and pore-free, with a mechanical strength of Mohs hardness close to 9, and is extremely resistant to corrosion and high-temperature impact.
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Yog tias koj tab tom nrhiav:
● High-performance SiC Coated Set Disc for Aixtron systems.
● Carrier solutions that support custom sizes, refurbishment services and high-temperature corrosion environments.
● High-quality components that improve MOCVD yield and extend process stability cycles.
Please contact us now to get the latest quote and technical specifications. We provide global delivery and technical support services to help you quickly deploy to your production line.
Specifications
Key physical properties analysis
1. Kub kub tsis kam
The upper limit of the operating temperature can reach 1600°C+. The coating structure will not crack or peel due to thermal stress and can withstand long-cycle MOCVD reaction environment.
2. Thermal conductivity and thermal uniformity
The combination of substrate + coating makes the heat conduction more efficient and avoids wafer growth defects caused by uneven heat. The consistency of thermal conduction ensures the uniform distribution of deposition thickness and composition, and improves the yield.
3. Chemical corrosion resistance
The coating can effectively resist highly corrosive MOCVD process gases such as hydrogen, ammonia, TMGa, and TMAl. The material itself is a highly dense β-SiC structure and almost no side reactions occur with the reaction gas.
4. Surface particle control
The coating surface has low roughness (Ra<0.5μm) and is not easy to adsorb particles or peel off. Reduce process micro-particle contamination, especially suitable for large-size wafer processes of 6 inches and above.
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Product application scenarios and their functions
1. Designed specifically for Aixtron Planetary Reactor structure
Applicable to the reaction chambers of planetary turntable structures such as AIX 200 and AIX 2800G4.
The Disc structure is precisely designed to ensure the thermal symmetry and airflow balance of the wafer during rotation.
2. Important role in compound semiconductor epitaxy
Applicable to MOCVD epitaxial growth of various III-V compound materials, including but not limited to:
● GaN/AlGaN: for LEDs, lasers, power devices.
● AlN, InGaN: for UV LEDs and high-frequency devices.
● GaAs/InP epitaxy: for high-speed electronic devices and laser communication chips.
Semiconductor chip epitaxy industry chain:
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Semixlab SiC Coated Set Disc shops
