SiC Coated Wafer tuav

SiC Coated Wafer Holder is a wafer support designed for semiconductor high-temperature processes. It uses high-purity graphite substrate + CVD SiC coating, has excellent corrosion resistance, thermal shock resistance and low pollution characteristics, and is widely used in key processes such as SiC/GaN epitaxy, MOCVD, CVD, and diffusion to ensure stable transmission and high-yield production of wafers in high-temperature environments.

daim ntawv thov:

SiC (Silicon Carbide) coated wafer carriers are used in semiconductor, photovoltaic, LED and advanced electronics manufacturing due to their unique properties.

Cov kev pabcuam uas muab tau: 

customer application scenario analysis, matching materials, technical problem solving.

Kev Tsis

Cov teb tseem ceeb ntawm daim ntawv thov

Kev pom zoo rau kev txheeb xyuas cov saw hlau ecological

Semixlab SiC Coated Wafer holder uses high-purity silicon carbide powder and is ISO-certified, making it a "reliable partner" for high-end semiconductor manufacturing with quantifiable performance improvements (yield, life, cleanliness).

Cov txheej txheem thov ib txwm muaj

Substrate pretreatment → Material selection → Machining → Cleaning → Surface roughening（Chemical etching）→ SiC coating deposition（Chemical Vapor Deposition (CVD)） → Post-processing→ High temperature annealing → Surface polishing → Defect Detection → Performance Verification → Adhesion Testing, Corrosion Resistance, Thermal Cycle Testing → Cleaning and Packaging

Through process parameter optimization, Semixlab SiC Coated Wafer holder has achieved breakthrough progress in semiconductor manufacturing processes (such as CVD, epitaxial growth, etching, etc.), gradually replaced imports in the semiconductor market. If you need to obtain detailed technical white papers or arrange sample testing, please contact our technical support team.

Semixlab SiC Coated Wafer holder core advantages

Kev ua haujlwm kub zoo heev

Kev ruaj khov kub siab: SiC muaj qhov chaw yaj txog li 2700 ℃ thiab tuaj yeem ua haujlwm ruaj khov rau lub sijhawm ntev hauv cov txheej txheem ib puag ncig ntawm 1000 ℃ ~ 1600 ℃ (xws li CVD, MOCVD, epitaxial kev loj hlob, thiab lwm yam), uas zoo dua li cov hlau tsis xeb lossis txhuas alloy nqa khoom. Cov coefficient nthuav dav thermal qis, tsis yooj yim rau deform ntawm qhov kub siab, thiab tswj tau qhov tseeb ntawm wafer.

Kev tiv thaiv kev poob siab thermal: SiC muaj cov thermal conductivity siab, tuaj yeem sai thiab sib npaug dissipate cua sov, thiab txo qhov kev pheej hmoo ntawm kev tawg los ntawm kev hloov pauv kub tam sim ntawd (ruaj dua li graphite).

Kev tiv thaiv corrosion thiab kev ua qias tuaj zoo heev

Resistant to corrosive gases such as HCl, H2, NH3(common in etching and epitaxial processes), preventing the carrier from being corroded and causing particle contamination. Strong anti-oxidation performance, more stable than graphite in high-temperature oxygen-containing environments (graphite requires coating protection, while SiC itself is resistant to oxidation). SiC coating can achieve a purity of more than 99.999%, preventing metal impurities (such as Fe, Ni) from contaminating the wafer, and is particularly suitable for silicon-based and wide bandgap semiconductor (GaN, SiC) manufacturing.

High mechanical strength and wear resistance

High hardness (Mohs hardness 9.2, second only to diamond), the surface is not easy to scratch, reducing the risk of particle shedding and extending the service life. Suitable for processes that require frequent contact such as CMP (chemical mechanical polishing), the wear resistance is better than metal or ceramic coatings. It is not easy to deform under high temperature load and maintains the flatness of the wafer (compared with graphite, which is easy to crack).

Kev ua tau zoo heev ntawm thermal conductivity thiab thermal uniformity

Kev xa cua sov sai ua kom muaj cua sov sib npaug ntawm cov wafer (txo cov tuab tsis sib xws thaum lub sijhawm loj hlob epitaxial). Haum rau cov txheej txheem kub nce thiab poob sai (xws li RTP quick annealing) los txhim kho kev ua haujlwm ntau lawm. Cov coefficient thermal expansion ntawm SiC yog ze rau ntawm silicon (Si) thiab silicon carbide (SiC) wafers, txo cov teeb meem lattice los ntawm kev ntxhov siab thermal.

Lub neej ntev thiab tus nqi kho mob tsawg

In plasma environments (such as dry etching), SiC has better sputtering resistance than aluminum or quartz, and its life can be extended by 3 to 5 times. The surface is dense and smooth, and it is not easy to absorb process residues. It can be reused through high-temperature incineration or chemical cleaning.

Kev sib xws thiab kev yooj yim tsim

Cov txheej txheem SiC tuaj yeem tso rau ntawm cov khoom siv xws li graphite, molybdenum, thiab carbon fiber, xav txog ob qho tib si lub teeb thiab lub zog siab. Los ntawm CVD lossis cov txheej txheem txau, cov qauv nyuaj ntawm cov neeg nqa khoom (xws li cov qauv porous thiab cov khoom cua sov embedded) tuaj yeem npaj tau.