VEECO LED EPI Susceptor

Kev loj hlob ntawm Epitaxial yog ib qho ntawm cov txheej txheem tseem ceeb tshaj plaws hauv kev tsim khoom siv semiconductor LED. Txawm tias qhov sib txawv me me hauv qhov kub thiab txias lossis kev loj hlob tuaj yeem ua rau muaj kev hloov pauv ntawm qhov ntev, cov txiaj ntsig poob qis, thiab cov nqi xaiv ntau ntxiv. Ntawm lub platform VEECO MOCVD, LED EPI Susceptor ua haujlwm ua lub hauv paus tseem ceeb, ua rau muaj kev tswj hwm qhov kub thiab txias meej, kev sib cuam tshuam ruaj khov ntawm cov roj thiab qhov chaw, thiab kev rov ua dua cov txheej txheem mus sij hawm ntev. Nws qhov kev ua tau zoo cuam tshuam ncaj qha rau qhov zoo ntawm txheej epitaxial thiab kev ua haujlwm ntawm kev tsim khoom tag nrho.

Lub Semixlab VEECO LED EPI Susceptor yog tsim tshwj xeeb rau VEECO cov tshuab LED MOCVD uas siv dav dav, suav nrog K465i, K475i, K465i-P, thiab Propel reactors. Ua los ntawm ultra-high-purity graphite, lub substrate no tau xaiv rau nws cov thermal conductivity zoo heev thiab kev tswj tau thermal teb, ua kom muaj cua sov ruaj khov nyob rau hauv qhov kub siab uas xav tau rau gallium nitride-based epitaxy. Txhawm rau txhim kho kev ruaj khov thiab kev ua kom huv, lub graphite substrate yog coated nrog silicon carbide (SiC) txheej tiv thaiv. Lub txheej no qhia tau tias muaj kev tiv thaiv zoo rau kev xeb tshuaj, thermal cycling, thiab cov khoom me me hauv cov chaw loj hlob ammonia- thiab hydrogen-nplua nuj.

Thaum lub sijhawm LED epitaxial loj hlob hauv VEECO MOCVD reactors, lub substrate ua lub luag haujlwm tseem ceeb hauv kev tsim thiab tswj kom muaj qhov kub thiab txias sib npaug thoob plaws txhua lub wafers hauv lub chamber. Rau ntau lub wafer configurations feem ntau siv hauv cov kab ke zoo li K465i thiab K475i, qhov kub thiab txias sib npaug ntawm wafers thiab los ntawm wafer center mus rau ntug yog qhov tseem ceeb rau kev tswj indium doping hauv InGaN quantum wells. Semixlab substrates zoo nqus thiab rov faib cov cua sov, txo cov thermal gradients kom tiv thaiv wavelength inhomogeneities, thickness variations, lossis localized stresses uas tuaj yeem tshwm sim hauv cov txheej LED nyuaj.

Tshaj li kev tswj hwm thermal, cov qauv geometry thiab cov yam ntxwv ntawm qhov chaw cuam tshuam rau tus cwj pwm ntws roj thiab kev ruaj khov ntawm cov txheej txheem ciam teb hauv lub reactor. Semixlab VEECO LED epitaxial kev loj hlob substrates ua kom muaj kev faib tawm roj sib npaug thiab tiv thaiv kev tso tawm ntawm cov kab mob parasitic, txhim kho epitaxial uniformity thiab txo qhov tsis zoo thaum lub sijhawm tsim khoom. Kev ntseeg siab mus sij hawm ntev yog qhov yuav tsum tau ua rau cov khoom siv LED wafer ntau siv cov khoom siv VEECO MOCVD. Kev raug rau qhov kub thiab txias ntau dua 1000 ° C thiab cov chaw muaj tshuaj lom neeg ua rau muaj kev ntxhov siab rau cov khoom siv reactor. Semixlab substrates muaj cov nplaim silicon carbide-coated uas muab kev tiv thaiv zoo rau kev ua kom tsis zoo, kev puas tsuaj ntawm txheej, thiab kev ua qias tuaj, thaum tswj kev ruaj khov emissivity thaum lub sijhawm ua haujlwm ntev.

Siv Semixlab txoj kev txawj ntse tob hauv cov ntaub ntawv txheej txheem semiconductor thiab cov khoom siv reactor MOCVD, VEECO LED EPI Susceptor tau tsim los ua kom tau raws li qhov xav tau ntawm cov txheej txheem LED epitaxial niaj hnub. Tib lub sijhawm, Semixlab tseem cog lus tias yuav xa cov thev naus laus zis siab heev thiab cov kev daws teeb meem LED EPI Susceptor rau cov txheej txheem semiconductor MOCVD epitaxial. Peb tos ntsoov yuav los ua koj tus khub mus sij hawm ntev hauv Suav teb.