TaC Coated Nplhaib rau SiC Epitaxial Reactor
Ua ib lub tuam txhab tsim khoom thiab tus muag khoom ntawm TaC Coated Rings hauv Suav teb, Semixlab TaC Coated Ring rau SiC Epitaxial Reactor yog ib qho khoom siv reactor ua haujlwm siab uas tau tsim los txhawb kev loj hlob ntawm silicon carbide epitaxial uas ruaj khov, sib xws, thiab rov ua dua nyob rau hauv cov txheej txheem hnyav. Tsim los siv rau hauv cov txheej txheem SiC epitaxy kub siab, lub nplhaib no ua lub luag haujlwm tseem ceeb hauv kev txhais cov ciam teb ntawm cov tshuaj tiv thaiv, tswj cov xwm txheej ntawm ntug wafer, thiab tswj cov kab mob parasitic hauv cov chaw muaj hydrogen thiab chlorine ntau. Peb tos ntsoov rau koj qhov kev nug.
Hauj lwm
Hauv cov reactors silicon carbide epitaxial, qhov kub thiab txias feem ntau tshaj 1600 ° C nyob rau hauv cov huab cua uas muaj hydrogen thiab chlorine corrosive heev. Kev ua tau zoo ntawm cov khoom siv tswj ciam teb thiab ntug cuam tshuam ncaj qha rau qhov zoo ntawm cov txheej epitaxial, qhov sib xws ntawm cov khoom, thiab lub sijhawm ua haujlwm ntawm cov khoom siv. Semixlab's tantalum carbide (TaC) coating rings tau tsim tshwj xeeb los ua kom tau raws li cov kev xav tau no hauv cov chaw tsim khoom loj. Cov nplhaib no ua haujlwm ua cov khoom siv kub siab rau SiC epitaxial reactors, ua kom ntseeg tau tias cov txheej txheem ruaj khov mus sij hawm ntev, kev loj hlob ntawm epitaxial sib xws, thiab kev huv ntawm reactor.
Hauv cov txheej txheem SiC epitaxy, tantalum carbide (TaC) txheej nplhaib tau muab tso ze ntawm cov npoo wafer lossis hauv thaj chaw hloov pauv reactor rau kev ntws thermal thiab roj. Lawv lub luag haujlwm tseem ceeb yog los tswj cov kub hauv zos thiab cov tshuaj tiv thaiv vapor-theem ntawm cov npoo wafer - thaj chaw feem ntau yooj yim rau kev tswj tsis tau parasitic deposition thiab ntug tsis sib xws. Los ntawm kev txhais cov ciam teb tshuaj tiv thaiv thiab kev tswj hwm cov silicon thiab carbon deposition tsis xav tau, cov txheej nplhaib txheej no ua kom zoo dua epitaxial thickness uniformity thiab dopant sib xws rau cov wafers SiC loj-txoj kab uas hla.
Semixlab xaiv tantalum carbide txheej vim nws qhov kev ruaj khov thermal zoo heev, tshuaj lom neeg tsis muaj zog, thiab tiv taus halide corrosion. Nrog lub ntsiab lus melting tshaj 3880 ° C thiab kev sib raug zoo zoo nrog H₂, HCl, thiab lwm yam tshuaj corrosive feem ntau siv hauv cov txheej txheem silicon carbide epitaxy, TaC zoo tiv thaiv cov substrate hauv qab los ntawm kev yaig thiab kev puas tsuaj ntawm cov qauv. Cov qauv txheej txheem siab-density, qis-porosity no txo cov khoom me me, txo qhov kev pheej hmoo ntawm microcracks lossis delamination, thiab ua kom muaj kev ruaj khov ntawm reactor thaum lub sijhawm ua haujlwm ntev.
Piv rau cov tshuaj silicon carbide lossis graphite susceptor ib txwm muaj, Tantalum Carbide Coating qhov kev hnav zoo tshaj plaws thiab kev tiv thaiv corrosion ua rau lub neej ntawm cov khoom siv ntev dua, yog li txo qhov zaus txij nkawm thiab cov txheej txheem hloov pauv. Los ntawm qhov kev xav txog tus nqi tsim khoom, lub nplhaib Tantalum Carbide Coating txhim kho cov txheej txheem rov ua dua thiab kev siv nyiaj tsim nyog. Rau cov kab ntau lawm epitaxial siab thiab kev tsim khoom siv hluav taws xob siab heev, qhov kev ruaj khov no txhais tau tias muaj txiaj ntsig ntau dua, kev siv cov khoom siv zoo dua, thiab cov nqi tsim khoom qis dua.
Ua ib lub tuam txhab ua lag luam thev naus laus zis hauv Suav teb txoj kev lag luam semiconductor epitaxial, Semixlab muaj kev txawj ntse tob hauv cov thev naus laus zis txheej txheem siab heev thiab cov ntaub ntawv txheej txheem semiconductor. Peb lub TaC Coated Ring rau SiC Epitaxial Reactor tau lees tias yuav tsim thiab tsim khoom raws li cov qauv tswj hwm zoo heev. Semixlab tseem cog lus tias yuav xa cov thev naus laus zis tshiab thiab kev daws teeb meem TaC Coated Ring rau SiC Epitaxial Reactor rau kev lag luam semiconductor. Peb tos ntsoov yuav los ua koj tus khub mus sij hawm ntev hauv Suav teb.
Specifications
| Lub cev muaj zog ntawm TaC txheej | |
| ceev | 14.3 (g/cm²)3) |
| Tshwj xeeb emissivity | 0.3 |
| Thermal expansion coefficient | 6.3*10-6/K |
| Hardness (HK) | 2000 HK ib |
| Kuj | 1 × 10-5 Aw* cm |
| Thermal ruaj khov | <2500 ℃ |
| Graphite loj hloov | -10 ~ 20 hli |
| Txheej thickness | ≥20um tus nqi raug (35um ± 10um) |
peb pab

Semixlab khoom khw


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