TaC Txheej Tig Phaj

Lub Phaj Tig TaC Txheej yog ib qho tseem ceeb uas tig tau uas tau tsim los rau cov txheej txheem semiconductor siab heev uas ua haujlwm nyob rau hauv qhov kub thiab txias heev, tshuaj lom neeg, thiab kev kho tshuab. Ntawm Semixlab, cov khoom no tau siv tshwj xeeb hauv kev loj hlob epitaxial kub thiab cov chaw ua haujlwm thermal rau semiconductors, qhov twg kev ruaj khov mus sij hawm ntev, kev sib xws ntawm cov txheej txheem, thiab kev tswj kev ua qias tuaj yog cov yam tseem ceeb ntawm kev tsim khoom thiab kev sib xws.

Hauv kev loj hlob epitaxial MOCVD, tshwj xeeb tshaj yog rau GaN thiab III-V compound semiconductors, MOCVD Rotation Plate ua haujlwm ua lub hauv paus tseem ceeb ntawm lub reactor lub thermal thiab flow field control system. Los ntawm kev ua kom ruaj khov thiab meej rotational tswj thaum lub sijhawm deposition, nws pab qhov nruab nrab radial kub gradients thiab cov roj concentration variations hla lub wafer nto. Lub tantalum carbide (TaC) txheej tuab ua kom muaj kev kam rau siab rau hydrogen-nplua nuj thiab metalorganic precursor ib puag ncig thaum tswj qhov kev ncaj ncees ntawm qhov kub tshaj qhov kev ua tau zoo ntawm cov khoom SiC lossis graphite-based. Qhov no ncaj qha pab txhawb rau kev txhim kho thickness uniformity, txo qhov tsis xws luag ceev, thiab txhim kho batch-to-batch repeatability.

Rau kev loj hlob ntawm SiC epitaxial ntawm 4H-SiC thiab 6H-SiC substrates, Tantalum Carbide Coating Rotation Plate ua rau muaj kev cuam tshuam ntau dua vim yog qhov kub thiab txias ntawm cov txheej txheem thiab cov xwm txheej tshuaj lom neeg ntau dua. Hauv qhov chaw ib puag ncig no, SiC epitaxial reactors xav tau cov ntaub ntawv uas muaj peev xwm tiv taus kev raug rau cov huab cua hydrogen kub siab ntev yam tsis muaj kev puas tsuaj ntawm cov txheej txheem, kev tsim cov khoom me me, lossis kev ua qias tuaj ntawm cov txheej txheem. TaC lub ntsiab lus yaj siab heev (3880 ° C), lub zog vapor qis, thiab kev tsis muaj zog tshuaj lom neeg tshwj xeeb muab cov khoom tiv thaiv zoo uas txo qis kev puas tsuaj ntawm cov txheej txheem thiab tiv thaiv kev sib kis ntawm cov khoom tsis huv los ntawm cov txheej txheem lossis cov txheej txheem.

Hauv kev kub siab annealing, kev kho cua sov, thiab cov cua sov sib npaug, Tantalum Carbide Coating Rotation Plate ua haujlwm ua lub tshuab ruaj khov thiab thermal interface, ua kom muaj kev txav mus los du thiab kev faib cua sov tas li. Lub emissivity siab thiab thermal stability ntawm Tantalum Carbide (TaC) nto pab tswj kev hloov pauv cua sov radiative, txo cov kub hauv zos thiab kev ntxhov siab thermal. Los ntawm ob qho tib si kev ntseeg siab ntawm cov txheej txheem thiab tag nrho cov nqi ntawm kev muaj tswv, Semixlab's TaC Coating Rotation Disks tau tsim los ua kom tau raws li qhov xav tau ntawm cov khoom lag luam wafer ntau. Cov txheej txheem txheej txheem TaC zoo tshaj plaws ua tiav qhov ceev thiab muaj zog lo, txo qis kev pheej hmoo ntawm cov kab nrib pleb me me, txheej txheej delamination, thiab cov khoom me me. Piv rau cov txheej txheem ib txwm muaj, lub neej ua haujlwm ntev txo qis zaus txij nkawm thiab lub sijhawm tsis tau npaj tseg.

Ua ib lub tuam txhab tsim khoom hauv Suav teb thiab lub Hoobkas muaj zog ntawm TaC Coating Rotation Plates, siv Semixlab txoj kev paub txog kev xav thiab kev txawj ntse hauv cov khoom siv ceramic thiab cov txheej txheem semiconductor coating, peb cov Tantalum Carbide Coating Rotation Plates tau dhau los ua qhov kev daws teeb meem rau cov txheej txheem semiconductor MOCVD, cov txheej txheem loj hlob SiC epitaxial, thiab cov txheej txheem thermal kub siab, xa cov kev ua tau zoo dua rau lub sijhawm ntev rau cov fabs. Qhov tseem ceeb tshaj, Semixlab tseem cog lus tias yuav muab cov lus qhia txog kev siv tshuab siab heev thiab cov kev daws teeb meem rau thaj chaw semiconductor epitaxy. Peb tos ntsoov yuav los ua koj tus khub ntev hauv Suav teb.