Porous graphite

Porous graphite is mainly used in PVT (physical vapor transfer) silicon carbide (SiC) single crystal growth process, is the core material of high temperature thermal field system. The product is made of ultra-high purity isostatically pressed graphite, which forms a uniform and controllable porous structure through precision CNC machining and pore control technology, ensuring excellent performance under extreme process conditions (2200℃). Its unique design significantly improves thermal field uniformity and optimizes gas phase transfer efficiency, which is a key guarantee for high-quality SiC crystal growth.

Core features and process advantages:

Extreme purity and low defect rate

The vacuum high-temperature purification process (3000℃ treatment) is used to further reduce the content of non-metallic impurities such as oxygen and nitrogen. Eliminate impurity induced crystal defects (such as microtubules, dislocations) to ensure the electrical performance consistency of SiC single crystals.

Ultra high temperature stability and thermal field control

In argon/vacuum environment, it can withstand 2200℃ continuous operation for more than 1000 hours, low coefficient of thermal expansion, and avoid material cracking caused by thermal stress.

The porosity supports gradient distribution design, combined with CFD simulation to optimize the pore size (10-200μm), accurately regulate the thermal field distribution, reduce the temperature gradient fluctuation (within ±3℃), and improve the crystal growth uniformity.

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Geometric adaptation: Support complex shape processing (such as annular crucible, multi-layer shield), matching customer furnace structure.

Surface treatment: Provide ultra-precision polishing or coating services to enhance corrosion resistance and service life.

Application performance verification

In the PVT SiC crystallization process, as a crucible and thermal field component:

Increase crystal growth rate by 15%-20% (compared with traditional graphite);

Wafer yield increased to more than 90% (4 inch SiC single crystal);

The maintenance period of the equipment is extended to 6 months (the usual 3 months).

Nthuav Qhia:

1. Other names: PVT graphite crucible, silicon carbide growth with porous graphite.

2. Application: PVT method (physical gas transport method) SiC single crystal growth core thermal field component.

3. Core parameters: purity ≥99.9995%, porosity 15-30%, temperature resistance 2200℃ (inert gas environment), thermal conductivity 100-150 W/m·K.

PVT growth furnace assembly: As part of SiC material sublimation and crystal growth, provides a stable thermal field distribution.

Thermal field shielding component: porous structure effectively reduces thermal stress and prolongs the service life of the equipment.

Seed crystal bracket: high mechanical strength to support the seed crystal, to ensure the directional growth of the crystal.

Gas diffusion layer: optimize gas phase transfer efficiency, improve single crystal quality and growth rate.

Ultra-high temperature performance: no softening deformation at 2200℃, supporting more than 1000 hours of continuous stable operation.

Custom thermal field design: Combined with CFD simulation to optimize pore gradient, improve crystal uniformity and yield.

Fast iteration service: provide process parameter matching test and deliver prototype solution within 72 hours.