High purity porous graphite
Semixlab’s high purity porous graphite is a high-performance material engineered for advanced semiconductor manufacturing processes including epitaxy, diffusion and oxidation, and CVD. Featuring ultra-low impurity levels and a carefully controlled porous microstructure, it delivers superior thermal uniformity, chemical stability, and contamination control under extreme high-temperature conditions. Widely used in susceptors, wafer carriers, heaters, and chamber components, Semixlab’s porous graphite supports stable process environments, improved yield consistency, and extended equipment lifetime across silicon, SiC, and GaN semiconductor technologies. We welcome your inquiry.
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High-purity porous graphite is a critical material for advanced semiconductor manufacturing, where its exceptional thermal stability, ultra-low contamination levels, and process consistency are paramount. Semixlab's High purity porous graphite solutions are specifically engineered for high-temperature and contamination-sensitive semiconductor processes.
In epitaxy processes, High purity porous graphite is extensively used in key components such as substrate holders, wafer carriers, gas distribution structures, and thermal field elements. During Si, SiC, and GaN epitaxial growth, precise temperature uniformity and stable gas flow are critical factors for film thickness control, doping uniformity, and defect suppression. Semixlab graphite's porous microstructure enables more uniform thermal distribution and controlled gas diffusion across the wafer surface, thereby reducing boundary layer instability and edge effects.
During diffusion and oxidation processes requiring sustained operation above 1000 °C, high-purity porous graphite serves as a reliable structural and support material for wafer boats, liners, and thermal insulation components. Compared to dense graphite, its porous structure mitigates thermal stress and deformation during repeated thermal cycling, enhancing dimensional stability and extending component lifespan. Its inherent chemical inertness and low impurity content help maintain a clean process environment, supporting strict control over dopant diffusion profiles and oxide film quality while minimizing risks of particle generation and cross-contamination.
For CVD, LPCVD, and PECVD processes, high-purity porous graphite plays a critical role in heaters, wafer carriers, and internal chamber components exposed to reactive gases and high temperatures. The material's excellent thermal conductivity ensures rapid, uniform heat transfer, while its porous structure allows controlled trapping of deposition byproducts, minimizing flaking and particle release during extended equipment operation. This directly contributes to enhanced process stability, extended maintenance intervals, and increased equipment uptime.
Semixlab's high-purity porous graphite is manufactured under a rigorous quality control system, with meticulous management of raw material selection, purification, and microstructure engineering. When extended service life or operation in more demanding chemical environments is required, this product is compatible with advanced protective coatings such as SiC or TaC. Leveraging exceptional design flexibility, machinability, and advanced semiconductor coating technology, our solutions can be precisely tailored to the specific requirements of your semiconductor equipment platform and process node. We sincerely look forward to becoming your long-term partner in China.
Specifications
| Typical physical properties of porous graphite | |
| lwm | parameter |
| Ntau tuab | 0.89 g / cm2 |
| Compressive zog | 8.27 MPa |
| Bending zog | 8.27 MPa |
| tensile zog | 1.72 MPa |
| Specific resistance | 130Ω-inX10-5 |
| Porosity | 50% |
| Qhov nruab nrab qhov pore loj | 70um |
| Thermal Tus Cwj Pwm | 12W/M*K |
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