High purity quartz diffusion rauv tube

High purity quartz diffusion furnace tube is specially designed for high temperature diffusion process in semiconductor wafer manufacturing. It is manufactured with ultra-high purity synthetic quartz sand (SiO₂purity ≥99.999%). Meet the stringent requirements for cleanliness, thermal stability and chemical inertness of advanced processes below 7nm. Products through arc melting process and precision machining technology, to ensure the stability of the structure in the 1200℃ high temperature environment, widely used in phosphorus/boron doping, oxide growth and other key processes.

Core materials and characteristics

Ultra high purity material

SiO₂ purity: ≥99.999% (5N grade), total impurity element ≤2ppm (in line with SEMI F63 standard).

Key impurity control: Li+Na+K≤0.5ppm, Fe≤0.1ppm, Al≤0.3ppm, B≤0.05ppm (avoid doping interference).

Hydroxyl content: ≤1ppm (after dehydroxylation treatment to prevent wafer defects caused by high temperature hydrogen evolution).

Thermal performance optimization

Thermal expansion coefficient: 5.5×10^-7K^-1(20-1000 °C), avoiding deformation cracking caused by sudden temperature changes.

Softening point: 1680℃, long-term working temperature ≤1250℃ (support rapid rise and cooling process).

Thermal shock resistance: withstand 1200℃→ room temperature quenching cycle ≥200 times (ASTM C338 standard verification).

Chemical inertness and cleanliness

Corrosion resistance: resistant to HF, HCl, HNO₃ and other strong acids (weight loss rate ≤0.005mg/cm²·h).

Surface cleanliness: Ra≤0.1μm (CMP polishing), particulate matter ≤5/m2 (@0.1μm, in line with ISO Class 1).

Metal pollution control: surface metal residue ≤0.1ppb (ICP-MS detection).

Nthuav Qhia:

1. Other names: Quartz reaction tube, high temperature furnace tube.

2. Application: Wafer diffusion process.

3. Core parameters: Purity ≥99.995%, temperature resistance 1600℃, inner diameter 20-300mm.

High temperature diffusion doping.

Phosphorus/Boron solid state source diffusion (1000-1200℃).

Rapid thermal Annealing (RTA) process (rising/cooling rate ≥100℃/s).

Ultra-high purity and crystallization resistance, prolong the life of the furnace tube.

Support complex structure design, adapt to diverse process requirements.

Strict dimension tolerance control (±0.5mm).