Silicon Carbide Cantilever Paddle

Silicon Carbide Cantilever Paddle is a high performance industrial component based on Reaction Bonded SiC (RBSiC) technology. Designed for harsh scenarios such as semiconductor wafer processing, photovoltaic cell coating and high temperature chemical vapor deposition (CVD). Its unique single-arm cantilever structure, combined with the extreme resistance characteristics of silicon carbide, can still maintain millimeter-level deformation accuracy in the continuous high temperature environment of 1350℃, becoming a revolutionary solution to replace traditional quartz, metal alloys and other materials.

Material breakthrough: Engineering reconstruction of silicon carbide

1. Micro miracle of reaction sintering process

About 10-15% free silicon phase is formed at the grain boundary of the cantilever paddle through the reaction sintering process of silicon melt penetrating the sic preform, forming a three-dimensional interlock structure. This microstructure gives it a density of 3.02 g/cm³, a porosity of less than 0.1%, and a bending strength of up to 250 MPa (20 ℃) while maintaining a lightweight weight (40% less than stainless steel), while maintaining an elastic modulus of 300 GPa even at 1200 ℃.

2. The ultimate balance of thermodynamic parameters

The thermal expansion coefficient (CTE) of the cantilever is precisely controlled at 4.5×10-6K-1, which is highly matched to the coating material of the LPCVD (low pressure chemical Vapor deposition) equipment to reduce the interface stress caused by thermal mismatch. Its thermal conductivity reaches 45 W/(m·K) at 1200℃, which can quickly soak heat and avoid local overheating, and with the patented design of the heat dissipation hole array, the temperature difference of the wafer tray is less than 2℃/m²

Technical advantage: The leap from laboratory to mass production

1. Automatic adaptive design

The load area of the cantilever paddle adopts a modular window structure (aperture accuracy ±0.05mm), which supports a 12-axis linkage grasping system equipped with 150-300mm wafers and compatible with the robot arm. The fixed ends were provided with a gradient wall thickness (δ₁=8.6mm to δ₁ 4.8mm) to ensure the structural rigidity and decrease the overall weight by 22% in ₃ to meet the dynamic stability requirements in high-speed transmission.

2. Revolution in pollution control

By in-situ generation of 2-5μm SiO₂ passivation layer on the surface, the cantilever blade in the corrosive atmosphere containing Cl₂, HF, metal ion precipitation is less than 0.1 ppb, which is 3 orders of magnitude lower than the alumina material. After 1000 high-temperature cycle tests, the number of surface particles falling off is always less than 5 /m2, meeting the Class 10 cleanliness requirements of semiconductor manufacturing.

Nthuav Qhia:

1. Other names: High temperature wafer transfer paddle; RBSiC cantilever vehicle; Coated cantilever platform; SiC Monolithic Cantilever.

2. Daim ntawv thov: 

Semiconductor manufacturing: Transport wafers in diffusion furnaces, annealing furnaces, oxidation furnaces and other equipment.

Photovoltaic coating: Support TOPCon/HJT cell PECVD process wafer transport,

3. Core parameters: The bending strength is 380 MPa (room temperature) →280 MPa (1400℃), the thermal expansion coefficient is 4.2×10⁻⁶/℃, and the corrosion rate of 40% HF is less than 0.008 mm/ year. Inert atmosphere 1600℃ continuous use, oxidation environment 1400℃, support 1400℃↔25℃ thermal shock cycle 500 times.

Kev tsim cov wafer semiconductor

Diffusion furnace wafer rack: In the phosphorus/boron doping process, the 300mm silicon wafer is subjected to 1250℃/8 hours of heat treatment, and the shape variable is less than 0.1mm/m.

Epitaxial growth tray: For MOCVD deposition of SiC epitaxial layers, supporting nanoscale positioning of wafers under 10-6 Torr vacuum.

Photovoltaic cell production

PERC coating vehicle: subjected to 800℃ plasma bombardment in PECVD equipment, the service life of more than 5000 times, 8 times higher than graphite materials.

TOPCon Laser sintering: With a laser system with a pulse width of 10ns, the selective sintering alignment accuracy of the back polycrystalline silicon layer is achieved with ±3μm.

1. Subversive breakthrough in material properties

The silicon carbide cantilever propeller adopts reactive sintering silicon carbide (RBSiC) technology, and penetrates silicon carbide matrix through silicon melt to achieve a dense structure with porosity < 0.5%. Its bending strength is as high as 380 MPa (room temperature), and it still maintains a strength of 280 MPa at 1400℃ high temperature.

2. Kev ruaj khov nyob rau hauv qhov chaw ib puag ncig hnyav

High temperature resistance: continuous working temperature up to 1600℃ (inert atmosphere), short-term resistance to 1800℃ instantaneous high temperature (such as laser sintering process), no softening or deformation risk.

Corrosion resistance: Corrosion rate of strong acids such as HF, HCl, and H₂SO₄ < 0.01 mm/ year. Life span in CVD reaction chambers containing Cl₂/O₂ increased 5-8 times compared to graphite materials.

Thermal shock resistance: Support 1400℃ ↔ 25℃ rapid temperature change cycle (ΔT=1375℃), no cracking or strength attenuation after 500 cycles.