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SiC siv lead ua loj hlob raw khoom
| Qhov chaw ntawm keeb kwm: | Tuam Tshoj |
| Hom Npe: | Semixlab |
| Model Number: | CVD SiC |
| Certification: | ISO 9001 |
| Yam Tsawg Tshaj: | A few kgs (support R & D level small batch purchase) |
| Nqe: | Customize quotes to specifications support high purity (≥99.9999%) orders |
| Ntim Paub meej: | High purity inert gas sealed bottle, moisture-proof and anti-oxidation aluminum foil bag |
| Tus me nyuam lub sij hawm: | 7-15 days (standard) / 20-30 days (custom formula) |
| Ntsiab lus uas them: | T/T (50% in advance, 50% before delivery) |
| Mov Muaj peev xwm: | Monthly production capacity 500kg,support high purity (≥99.9999%) orders |
Hauj lwm
SiC crystal growth raw material is the latest advanced material developed by Semixlab. The main component is the CVD SiC block. The quality of SiC single crystal grown by this raw material is excellent and has the leading level in the industry.
Product core bright
Subversive preparation process
Using independent patent fluidbed CVD technology (patent No. : ZL2024XXXXXXX), methyl trichlorosilane (MTS) as the precursor, to achieve:
Purity > 99.9995% (GDMS total elemental analysis)
Nitrogen content ≤0.09ppm (no additional purification)
Particle size 4-10mm (traditional self-spreading method < 2.5mm)
Crystal growth advantage
| Index | conventional self-spreading method SiC powder | Semixlab SiC crystal growth raw material |
| The density of microtubules ranged | 103~ 104cm-2 | <300 cm-2 |
| The utilization rate of raw materials | 30% -40% | > 50% |
Kev tiv thaiv ib puag ncig thiab kev lag luam
Zero pollution discharge: hydrochloric acid can be neutralized into salt
Cost reduction of 30% : raw material methyltrichlorosilane is China's dominant chemical
SiC crystals grown using SiC crystal growth raw material
Nthuav Qhia:
1. Other names: CVD SiC block; SiC fragment.
2. Application: Raw material for SiC single crystal growth.
3. Core parameters: Purity > 99.9995% (GDMS total elemental analysis), Nitrogen content ≤0.09ppm (no additional purification), Particle size 4-10mm (traditional self-spreading method < 2.5mm).
Specifications
daim ntawv sau npe
Raw material for SiC single crystal growth.
Kev Tshaj Loj (Competitive Advantage)
1. A breakthrough in purity
Purity ≥99.9995% (GDMS whole element analysis). Nitrogen content ≤0.09ppm was achieved by chemical vapor deposition (no secondary purification). Especially suitable for semi-insulating SiC single crystal growth needs.
2. Particle size and density optimization
Large particle size (4-10mm), significantly improve the crucpot loading capacity (more than 1.5kg for the same volume), reduce carbon encapsulation defects during crystal growth.
3. The cost advantage is significant
Reduce raw material costs by 30%.
Using methyltrichlorosilane (MTS) as the precursor, the raw material procurement cost is only 1/3 of the traditional high-purity silica fume + graphite scheme. Raw material utilization rate > 50% (traditional process only 30%-40%).
4. Environmental protection closed loop process
Zero pollution emission.
Hydrochloric acid, the by-product of production, generates harmless salts through neutralization reaction, completely avoiding the three waste treatment problems of traditional processes (pickling/waste gas treatment costs account for more than 15%).
5. Crystal quality jumps
The density of microtubules was < 300 cm-2.
The Si/C atom ratio of raw material is close to 1:1 (traditional method deviation > 5%), reducing the silicon segregation defects during crystal growth. Ingot yield of 85%-92% (65%-75% of competing products), reducing the single crystal cutting loss of downstream customers.
