Cov txheej txheem tantalum carbide siv rau dab tsi?

Abstract: Tantalum Carbide (TaC) txheej yog cov khoom siv ceramic ua haujlwm siab uas siv los tiv thaiv cov khoom tseem ceeb hauv qhov chaw ib puag ncig hnyav, tshwj xeeb tshaj yog hauv kev tsim khoom semiconductor. Peb yuav kawm txog nws cov lus txhais, cov khoom siv lub cev, cov khoom sib xws, thiab cov luag haujlwm tshwj xeeb hauv kev ua cov semiconductor.

Txheej TaC yog dab tsi?

TaC txheej yog ib txheej ceramic kub heev (UHTC) uas muaj cov tantalum thiab cov carbon atoms. Nws tsis muaj zog hauv tshuaj, tsis yooj yim tawg, thiab tsim los tiv thaiv cov substrates xws li graphite los ntawm kev puas tsuaj los ntawm cua sov, kev xeb los ntawm tshuaj, thiab kev hnav khaub ncaws.

● Cov Ntawv Thov Tseem Ceeb: Feem ntau siv rau hauv kev loj hlob ntawm cov siv lead ua los ntawm semiconductor (piv txwv li, SiC, GaN), kev tiv thaiv cua sov rau aerospace, thiab cov txheej txheem kev lag luam kub siab.

Tantalum carbide (TaC) txheej nyob rau hauv ib qho kev sib txuas ntawm microscopic

Lub cev lub cev thiab tshuaj

Tantalum Carbide TaC txheej ua rau pom cov yam ntxwv zoo tshaj plaws ntawm cov khoom siv, ua rau lawv zoo tagnrho rau cov chaw ib puag ncig hnyav:

● Qhov Kub Melting Siab: 3880°C, ua kom ruaj khov siab tshaj 2200°C hauv cov reactors semiconductor.

● Kev Ua Kub: 22 W/m·K, ua kom muaj kev kub hnyiab zoo hauv cov ntawv thov muaj zog heev.

● Kev Nthuav Dav Thermal Qis: Coefficient ntawm 6.6 × 10⁻⁶ K⁻¹, txo kev ntxhov siab thermal thiab kev pheej hmoo tawg.

● Kev Tsis Muaj Tshuaj Lom: Tiv taus H₂, NH₃, SiH₄, thiab cov hlau uas yaj, uas tseem ceeb rau kev tswj kom huv hauv cov txheej txheem semiconductor.

● Qhov Nyuaj: Qhov nyuaj ntawm Mohs yog 9–10, hla ntau cov khoom siv ceramic xws li SiC, ua kom ruaj khov tiv thaiv kev txhuam.

Tantalum Carbide Txheej Txheem Sib Xws

Cov txheej txheem TaC feem ntau yog siv rau cov ntaub ntawv carbon vim lawv cov tshuaj lom neeg thiab thermal sib xws:

● Graphite: Cov khoom siv feem ntau rau cov khoom siv semiconductor (piv txwv li, crucibles, wafer carriers). TaC tiv thaiv kev oxidation graphite thiab silicon vapor corrosion, ua rau cov khoom siv ntev dua 30–50%.

● C/C Composites: Siv rau hauv kev tsav dav hlau rau kev tiv thaiv cua sov. TaC ua rau muaj kev tiv thaiv oxidation hauv cov rocket nozzles thiab turbine blades.

● Cov Txheej Hloov Pauv: Txhawm rau daws qhov teeb meem ntawm kev nthuav dav thermal tsis sib xws, cov txheej nruab nrab (piv txwv li, SiC) lossis cov txheej gradient qee zaum raug siv ntawm TaC thiab cov substrate.

Lub Luag Haujlwm hauv Kev Tsim Khoom Semiconductor

Hauv kev tsim khoom siv semiconductor, Cov txheej txheem TaC yog qhov tseem ceeb rau kev tswj hwm qhov zoo ntawm siv lead ua thiab kev ua haujlwm zoo:

A. SiC Crystal Growth (PVT Txoj Kev)

● Crucibles: Cov graphite crucibles uas muaj TaC coated txo cov nitrogen impurities hauv SiC crystals los ntawm 99%, txo cov qhov tsis zoo xws li micropipes. Cov kev tshawb fawb qhia tau tias cov carrier concentration poob qis los ntawm 4.5 × 10¹⁷/cm³ (graphite liab qab) mus rau 7.6 × 10¹⁵/cm³ nrog TaC.

● Kev Sib Npaug Kub: Lub txheej txheej ua kom muaj kev faib cua sov sib npaug, qhov tseem ceeb rau kev loj hlob cov hlau SiC tuab, huv si.

B. GaN/AlN Epitaxy (MOCVD)

● Cov Khoom Nqa Wafer: Cov khoom nqa uas tau txheej TaC tiv taus kev xeb ntawm ammonia (NH₃) thiab hydrogen (H₂) ntawm 1000–1400°C, tswj cov txheej txheem stoichiometry thiab txo cov khoom me me uas ua rau muaj kev sib kis.

● Cov Tshuaj Txhaj Roj: Cov khoom uas tau coated tiv thaiv cov tshuaj tiv thaiv tsis xav tau nrog cov pa roj precursor, ua kom cov zaj duab xis sib xws

C. Kev Siv Nyiaj Zoo

● Lub Neej Siv Tau Ntev Dua: Cov khoom siv graphite uas tau txheej yuav siv tau ntev dua 30–50%, txo cov nqi hloov pauv los ntawm 9–15% hauv kev tsim SiC.

Kev sib piv nrog Silicon Carbide SiC Txheej

TaC ua tau zoo dua li cov txheej txheem ib txwm muaj xws li SiC hauv cov xwm txheej hnyav:

● Kev Ruaj Ntseg Thermal: TaC ua haujlwm siab tshaj 2200°C, thaum SiC lwj tshaj 1600°C.

● Kev Tiv Thaiv Kev Sib Tsoo: Hauv cov chaw NH₃, TaC tus nqi sib tsoo (0.2 µm/teev) yog 7.5 × qis dua SiC (1.5 µm/teev).

● Kev Huv Si: Cov theem tsis huv ntawm TaC (<5 ppm) tiv thaiv kev cuam tshuam ntawm dopant hauv cov wafers semiconductor.

Vim li cas ho xaiv Semixlab?

Semixlab yog ib lub tuam txhab tsim khoom siv semiconductor coating hauv Suav teb, tsom mus rau kev tsim cov txheej txheem CVD SiC / TaC, semiconductor graphite, thiab cov ntaub ntawv ntim khoom rau cov khoom siv ua semiconductor. Nrog lub hom phiaj ntawm kev pabcuam cov neeg siv khoom tag nrho, peb txhawb nqa cov kev pabcuam qauv thiab cov khoom lag luam tshwj xeeb thiab cov kev daws teeb meem kev siv tshuab, thiab peb tos ntsoov yuav koom tes nrog koj mus sij hawm ntev.