PVT Silicon Carbide Crystal Growth: Cov Khoom Siv Thermal Field Advanced rau High-Yield SiC Crystal Manufacturing

Raws li kev lag luam thoob ntiaj teb ntawm lub zog semiconductor ua kom nrawm dua kev siv cov khoom siv silicon carbide (SiC) rau cov ntawv thov hauv cov tsheb fais fab, cov tshuab hluav taws xob rov ua dua tshiab, thiab cov khoom siv hluav taws xob siab, qhov kev thov rau cov khoom siv SiC loj dua, qhov tsis zoo tsawg tseem txuas ntxiv loj hlob. PVT silicon carbide crystal growth technology yog lub hauv paus ntawm qhov kev hloov pauv tsim khoom no thiab yog cov txheej txheem tseem ceeb rau kev tsim cov khoom siv 4H-SiC zoo rau cov khoom siv hluav taws xob tiam tom ntej.

Cov Teeb Meem Tseem Ceeb Uas Tab Tom Ntsib Niaj Hnub PVT Silicon Carbide Crystal Growth Systems

Txawm hais tias muaj ntau xyoo ntawm kev txhim kho, PVT silicon carbide siv lead ua kev loj hlob tseem yog ib qho ntawm cov txheej txheem nyuaj tshaj plaws hauv kev tsim khoom semiconductor. Kev loj hlob ntawm siv lead ua tshwm sim hauv qhov chaw kaw, kub siab tshaj 2000 ° C, qhov twg cov ntaub ntawv silicon carbide sublimate thiab recondense rau ntawm cov noob siv lead ua nyob rau hauv kev tswj hwm qhov kub thiab txias. Hauv cov xwm txheej hnyav no, txawm tias qhov hloov pauv me me hauv kev faib tawm kub, vapor thauj kinetics, lossis cov khoom siv purity tuaj yeem cuam tshuam rau cov qauv siv lead ua, polymorph stability, thiab defect tsim.

Ib qho ntawm cov teeb meem loj tshaj plaws hauv kev loj hlob ntawm PVT SiC siv lead ua yog qhov ruaj khov mus sij hawm ntev ntawm lub tshav kub. Cov khoom siv graphite ib txwm muaj kev cuam tshuam tas li rau cov pa roj uas muaj silicon, xws li Si, Si₂C, thiab SiC₂. Thaum lub sijhawm ua haujlwm ntev, cov pa roj no cuam tshuam nrog qhov chaw graphite, ua rau cov khoom siv maj mam lwj, kev hloov pauv ntawm qhov loj me, thiab kev cuam tshuam ntawm qhov kub thiab txias tsim. Raws li qhov geometry ntawm thaj chaw thermal hloov pauv, nws nyuaj rau tswj cov xwm txheej supersaturated saum toj no qhov interface loj hlob, uas feem ntau ua rau kev loj hlob ntawm siv lead ua tsis ruaj khov, txo qis kev loj hlob, thiab nce qhov tsis zoo.

Cov khoom siv huv si kuj yog qhov tseem ceeb uas txwv tsis pub ua. Cov pa roj nitrogen, boron, txhuas, titanium, thiab lwm yam khoom siv hlau uas muaj nyob rau hauv cov khoom siv thermal field ib txwm muaj nyob rau hauv theem vapor thaum lub sijhawm ua haujlwm kub siab. Thaum cov khoom tsis huv no nkag mus rau hauv cov siv lead ua kom loj hlob, lawv hloov pauv qhov concentration ntawm cov neeg nqa khoom, resistivity, thiab kev them nyiaj hauv 4H-SiC lattice. Qhov tseem ceeb tshaj, cov xwm txheej nucleation uas tsav los ntawm impurity ua rau muaj kev tsim cov microtubes, basal plane dislocations (BPDs), screw-type dislocations (TSDs), thiab lwm yam kev puas tsuaj ntawm cov qauv, uas cuam tshuam ncaj qha rau wafer yield thiab kev ntseeg siab ntawm cov khoom siv downstream.

Raws li cov chaw tsim khoom silicon carbide (SiC) hloov pauv ntawm 6-nti wafer ntau lawm mus rau 8-nti wafer ntau lawm, qhov yuav tsum tau ua rau lub thermal field stability kuj tau nce ntxiv ntau heev. Cov kab uas hla loj dua xav tau lub voj voog loj hlob ntev dua, kev sib npaug ntawm qhov kub thiab txias radial nruj dua, thiab kev tswj hwm zoo dua ntawm kev ntxhov siab thermal. Cov kab ke thermal field graphite ib txwm muaj feem ntau nyuaj rau kev tswj hwm qhov ruaj khov uas xav tau rau kev loj hlob ntawm cov kab uas hla loj, ua rau cov nqi ua haujlwm siab dua thiab kev ua haujlwm qis dua.

Cov Khoom Siv Thermal Field Advanced rau PVT Silicon Carbide Crystal Growth

1. CVD TaC Txheej Txheem rau Kev Ruaj Ntseg Kub Heev

Txhawm rau daws cov teeb meem no, kev tsim kho thermal field siab heev tau dhau los ua tus tsav tsheb tseem ceeb hauv kev loj hlob ntawm PVT silicon carbide siv lead ua niaj hnub. Ib qho ntawm cov kev nce qib zoo tshaj plaws hauv thaj chaw no yog kev qhia txog cov tshuaj lom neeg vapor deposition (CVD) tantalum carbide (TaC) coatings. Nrog rau qhov chaw yaj ntawm ze li ntawm 3880 ° C thiab kev tiv thaiv zoo rau cov pa roj silicon-nplua nuj, TaC ua haujlwm ua qhov thaiv kev sib kis zoo ntawm cov pa roj reactive thiab graphite substrates. TaC coatings tiv thaiv kev siv graphite thiab tswj kev ruaj khov geometric thaum lub sijhawm loj hlob ntev, yog li pab khaws cia thermal field symmetry thiab txhawb nqa cov kinetics loj hlob ntawm crystal ruaj khov dua.

2. Cov Khoom Noj Khoom Haus Siab 7N Silicon Carbide rau Kev Txo Qhov Tsis Zoo

Lwm qhov kev nce qib tseem ceeb yog kev siv cov khoom siv SiC uas muaj cov khoom siv ntshiab heev uas tau npaj los ntawm kev tso pa tshuaj lom neeg (CVD). Piv rau cov khoom siv Acheson-txheej txheem ib txwm muaj, cov hmoov SiC uas tau npaj los ntawm CVD muaj cov nitrogen thiab cov hlau tsis huv tsawg dua. Nrog rau qhov huv siab txog li 7N (99.99999%), cov khoom siv no ua rau muaj kev tswj hwm cov pa dej kom meej dua thaum lub sijhawm sublimation, txo qhov yuav muaj cov khoom tsis huv thaum txhim kho qhov zoo ntawm cov siv lead ua thiab kev ua haujlwm hluav taws xob. Cov khoom siv raw uas muaj cov khoom huv siab no tau lees paub ntau ntxiv tias yog qhov yuav tsum tau ua rau kev tsim cov khoom siv uas tsis muaj qhov tsis zoo uas siv rau hauv cov khoom siv hluav taws xob siab thiab cov khoom siv SiC hauv tsheb.

3. Cov Qauv Graphite Microporous Tsim Kho

Kev ua kom zoo dua ntawm thaj chaw kub yog txhim kho ntxiv los ntawm cov qauv graphite microporous uas tsim los tswj kev hloov pauv cua sov thiab roj hauv qhov chaw crucible. Los ntawm kev tswj hwm qhov faib porosity thiab thermal conductivity, cov khoom no pab tsim kom muaj qhov kub thiab txias sib npaug thiab txo cov kev cuam tshuam convective. Yog li ntawd, cov ingots silicon carbide loj-txoj kab uas hla qhia tau tias muaj kev loj hlob ruaj khov dua, txo qis kev ntxhov siab thermal, thiab txhim kho kev ua haujlwm ntawm cov qauv.

4. Txheej Txheem Tiv Thaiv Pyrolytic Carbon (PYC)

Ua ke nrog cov thev naus laus zis no, cov pa roj carbon pyrolytic (PYC) txheej ntxiv tiv thaiv cov khoom me me thiab kev nqus roj. Nws cov qauv carbon uas tau teeb tsa zoo tsim cov nplaim tsis muaj qhov, txo cov chaw ua qias tuaj hauv chav loj hlob thaum txhim kho lub zog ntawm cov khoom thaum lub sijhawm rov ua dua thermal cycling. Qhov no pab ncaj qha rau kev txo cov nqi tsim cov qhov tsis zoo thiab txhim kho cov txheej txheem rov ua dua.

Kev Txhim Kho Kom Muaj Peev Xwm Hauv Kev Ua Tau Zoo ntawm Silicon Carbide Crystal Growth Performance

Qhov kev sib koom ua ke ntawm cov thev naus laus zis siab heev no tau ua rau muaj kev txhim kho uas ntsuas tau hauv cov ntsuas tseem ceeb ntawm kev tsim khoom. Lub kaw lus thermal teb zoo tshaj plaws tau ua pov thawj tias ua rau cov nqi loj hlob ntawm cov siv lead ua los ntawm 15-20%, tswj cov wafer yield stability siab dua 90%, txuas ntxiv lub sijhawm txij nkawm los ntawm 3 txog 6 lub hlis, thiab txo cov nqi khiav lag luam los ntawm ze li ntawm 40%. Qhov tseem ceeb tshaj, cov kev txhim kho no ua rau muaj qhov tsis zoo hauv qab 0.05 qhov tsis zoo / cm², yog li ua rau muaj kev tsim cov khoom siv ua tau zoo uas tsim nyog rau kev siv tsheb thiab kev lag luam fais fab semiconductor.

Raws li kev thov thoob ntiaj teb rau cov khoom siv silicon carbide txuas ntxiv mus, qhov zoo dua ntawm kev sib tw ntawm cov chaw tsim khoom SiC substrate nce ntxiv nyob ntawm lawv lub peev xwm los tswj cov khoom siv crystal zoo, ua kom siv reactor ntau tshaj plaws, thiab txo qhov sib txawv ntawm kev tsim khoom. Tiv thaiv qhov keeb kwm yav dhau los no, cov ntaub ntawv thermal teb siab heev - suav nrog TaC-coated graphite Cheebtsam, ultra-high-purity SiC feedstock, engineered graphite qauv, thiab pyrolytic carbon tiv thaiv txheej - tau dhau los ua cov thev naus laus zis tseem ceeb rau kev loj hlob ntawm cov tiam tom ntej PVT silicon carbide crystals.

Saib mus tom ntej, kev tsim kho tshiab hauv kev tsim kho thermal field yuav ua lub luag haujlwm tseem ceeb hauv kev ua tiav cov wafer loj dua, muaj peev xwm tsim khoom ntau dua, thiab txo qhov tsis zoo. Rau cov chaw tsim khoom cog lus rau kev tsim khoom SiC wafer uas tuaj yeem nthuav dav thiab pheej yig, kev ua kom zoo dua ntawm thermal field tsis yog qhov kev txiav txim siab thib ob lawm tab sis yog qhov yuav tsum tau ua kom muaj kev sib tw mus sij hawm ntev hauv kev lag luam semiconductor dav dav uas loj hlob sai.

Cov Lus Nug Txog PVT Silicon Carbide Crystal Growth

1. PVT Silicon Carbide Crystal Growth yog dab tsi, thiab vim li cas nws thiaj yog txoj kev nyiam tshaj plaws rau kev tsim cov SiC substrates?

Kev Thauj Mus Los Ntawm Lub Cev (PVT) tam sim no yog cov thev naus laus zis loj hlob ntawm cov siv lead ua los ntawm cov pob zeb siv lead ua uas tau txais kev pom zoo tshaj plaws rau kev tsim cov khoom siv silicon carbide zoo. Hauv cov txheej txheem no, cov khoom siv SiC uas muaj kev ntshiab siab yog sublimated ntawm qhov kub feem ntau tshaj 2000 ° C thiab thauj mus los ntawm theem pa tswj hwm ua ntej rov ua kom sib xyaw rau ntawm cov siv lead ua noob.

Piv nrog lwm txoj kev loj hlob ntawm cov siv lead ua, PVT muaj kev nthuav dav zoo dua rau kev tsim cov siv lead ua 4H-SiC loj thaum tswj hwm qhov zoo ntawm cov siv lead ua thiab kev lag luam tsim khoom. Thaum kev lag luam hloov mus rau 200 hli (8-nti) wafers, kev txhim kho tas mus li hauv PVT thermal field tsim, kev tswj hwm kev thauj mus los ntawm cov pa, thiab kev huv ntawm cov khoom tseem ceeb rau kev ua tiav cov khoom lag luam siab.

2. Muaj teeb meem dab tsi tshwm sim thaum hloov ntawm 6-nti mus rau 8-nti SiC wafer ntau lawm?

Qhov kev hloov pauv ntawm 150 hli (6-nti) mus rau 200 hli (8-nti) SiC wafers sawv cev rau ib qho ntawm cov kev txhim kho tseem ceeb tshaj plaws hauv kev lag luam semiconductor dav-bandgap. Txawm li cas los xij, cov kab uas hla loj dua ua rau muaj teeb meem loj heev.

Lub thermal mass ntawm cov siv lead ua rau nce ntxiv ntau heev, xav tau lub sijhawm ntev dua rau kev loj hlob thiab kev tswj hwm nruj dua ntawm cov radial kub gradients. Cov me me thermal asymmetries uas tej zaum yuav txais tau hauv cov siv lead ua me me tuaj yeem ua rau muaj kev ntxhov siab, tawg, thiab qhov tsis zoo hauv cov pob loj dua.

Yog li ntawd, kev tsim khoom SiC 8-nti xav tau cov ntaub ntawv thermal field zoo dua, cov qauv rwb thaiv tsev zoo dua, cov txheej txheem siab heev, thiab cov qauv tsim cua sov zoo tshaj plaws kom tswj tau qhov ruaj khov ntawm cov txheej txheem thoob plaws lub voj voog loj hlob ntev.

3. TaC txheej txhim kho PVT Silicon Carbide Crystal Growth kev ua tau zoo li cas?

Tantalum carbide (TaC) yog ib qho ntawm cov khoom siv ceramic kub siab tshaj plaws uas ruaj khov rau PVT qhov chaw loj hlob. Nrog lub melting point ze li ntawm 3880 ° C, TaC coatings muab kev tiv thaiv zoo heev rau cov pa roj silicon uas tsim thaum lub sijhawm SiC sublimation.

Thaum siv rau cov khoom graphite los ntawm Chemical Vapor Deposition (CVD), TaC ua haujlwm ua ib qho kev thaiv kev sib kis uas tiv thaiv kev yaig tshuaj, txo qis kev tsim cov khoom me me, thiab khaws cov qauv geometry qub ntawm cov qauv thermal teb.

Kev tswj hwm qhov ruaj khov ntawm qhov ntev thoob plaws lub voj voog loj hlob pab tswj cov xwm txheej thauj mus los ntawm cov pa thiab cov cua sov, uas ua rau muaj kev txhim kho kev loj hlob ntawm cov siv lead ua thiab txo qis cov nqi tsim teeb meem.