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SiC coated wafer susceptor
Nthuav Qhia:
Purpose: Specifically designed for semiconductor CVD (1000°C - 1400°C) and PVD high-temperature processes, it provides a stable support platform for wafers.
Core parameters: Surface roughness Ra < 0.5 μm;high hardness (>2500 HV);the coefficient of thermal expansion (CTE) is precisely matched (≈ 2.6 x 10⁻⁶/K), completely eliminating wafer warpage or slip caused by thermal stress.
Hauj lwm
Semixlab provides high performance wafer susceptor. This product is mainly applied to semiconductor CVD PVD equipment to provide support for wafers and prevent any damage and accidental drops caused by nitrogen flow.
SiC Coated silicon carbide base (SiC coated Susceptor) is widely used in semiconductors due to its features such as high-temperature resistance, corrosion resistance, high purity and less pollution to wafers.
daim ntawv thov:
Specifically designed for semiconductor CVD (1000°C - 1400°C) and PVD high-temperature processes, it provides a stable support platform for wafers.
Tub ntxhais nta:
Outstanding high-temperature stability: Withstands extreme temperatures above 1400°C, ensuring precise wafer positioning without any deviation.
Super strong protection: Effectively resist the impact of nitrogen flow >10 m/s and accidental drops, providing maximum protection for the wafer.
Outstanding durability: The SiC coating offers high hardness (>2500 HV) and corrosion resistance, extending service life.
High-purity surface: Surface roughness Ra < 0.5 μm, reducing the risk of particle contamination.
Silicon base (silicon Susceptor)
Application: Suitable for high-temperature processes of silicon wafers with extremely high requirements for thermal matching (such as epitaxial growth, <1200°C).
Tub ntxhais nta:
● Perfect thermal matching: Consistent with the wafer material (monocrystalline silicon), the coefficient of thermal expansion (CTE) is precisely matched (≈ 2.6 x 10⁻⁶/K), completely eliminating wafer warpage or slip caused by thermal stress.
● Fast delivery: The delivery cycle of standard products is significantly shortened, as low as 4-6 weeks (compared with 8-12 weeks for SiC bases).
● High purity: Meets the standards of semiconductor-grade silicon materials.
● Surface quality: Precisely polished, surface roughness Ra < 0.2 μm.
Specifications
| Cov yam ntxwv ntawm lub cev ntawm CVD SiC txheej | |
| Khoom | Tus Nqi Qub |
| Crystal Structure | FCC β theem polycrystalline, feem ntau (111) taw qhia |
| ceev | 3.21 g / cm³ |
| Hardness | 2500 Vickers hardness (500g load) |
| Nthuav Loj | 2 ~ 10μm |
| Tshuaj Purity | 99.99995% |
| Peev Xwm Kub | 640 XNUMXj kg-1·K-1 |
| Sublimation kub | 2700 ℃ |
| Kev Ua Tau Zoo | 415 MPa RT 4-point |
| Hluas lub Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| Thermal Kev Coj Ua | 300W·m-1·K-1 |
| Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
daim ntawv sau npe
SiC epitaxial txheej kev loj hlob graphite susceptor.
Kev hloov pauv roj nkag thiab kev tswj hwm thermal hauv SiC epitaxial growth furnace.
Semixlab khoom khw
