SiC Coated Wafer Susceptor

SiC Coated Wafer Susceptor is a key component used in high-temperature processes such as semiconductors, LEDs, and photovoltaics. It is mainly used to carry and heat wafers (such as Si, GaN, SiC, sapphire and other substrates) in processes such as chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), and epitaxy. SiC coating provides excellent high temperature resistance, corrosion resistance, and thermal stability, and is suitable for harsh process environments.

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SiC (Silicon Carbide) Coated Wafer Susceptor is a key component widely used in semiconductor manufacturing and high-temperature processes, mainly used to support and heat wafers.

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Semixlab SiC Coated Wafer Susceptor has passed international standard verification, its quality has been authoritatively recognized, and it has a number of patented technologies, achieving a SiC coating purity of more than 99.9999%.

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Graphite substrate processing → Surface pretreatment → SiC coating preparation→ Post-processing → Quality inspection → Cleaning and packaging

Through cutting-edge process parameter optimization, Semixlab SiC Coated Wafer Susceptor has achieved a major technological breakthrough in high-end semiconductor epitaxial applications. This innovation has enabled progressive import substitution in the semiconductor market, offering a high-performance, cost-effective domestic solution. Our susceptors have been successfully implemented in epitaxial growth scenarios such as GaN, SiC, LED, and power devices, demonstrating exceptional thermal stability, uniformity, and longevity—key factors for high-yield epitaxial processes.

For detailed technical specifications, white papers, or sample testing arrangements, please contact our Technical Support Team to explore how Semixlab can enhance your epitaxial process efficiency.

Semixlab SiC Coated Wafer Susceptor core advantages

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High temperature stability: SiC has a melting point of up to 2700℃ and can work stably for a long time in a process environment of 1000℃~1600℃ (such as CVD, MOCVD, epitaxial growth, etc.), which is much better than stainless steel or aluminum alloy carriers. Low thermal expansion coefficient, not easy to deform at high temperature, and maintain wafer positioning accuracy.

Thermal shock resistance: SiC has high thermal conductivity, can quickly and evenly dissipate heat, and reduce the risk of cracking caused by sudden temperature changes (more durable than graphite).

Excellent corrosion and pollution resistance

Resistant to corrosive gases such as HCl, H2, NH3(common in etching and epitaxial processes), preventing the carrier from being corroded and causing particle contamination. Strong anti-oxidation performance, more stable than graphite in high-temperature oxygen-containing environments (graphite requires coating protection, while SiC itself is resistant to oxidation). SiC coating can achieve a purity of more than 99.9999%(6N), preventing metal impurities (such as Fe, Ni) from contaminating the wafer, and is particularly suitable for silicon-based and wide bandgap semiconductor (GaN, SiC) manufacturing.

Excellent thermal conductivity and thermal uniformity

Fast heat conduction ensures uniform heating of the wafer (reduces uneven thickness during epitaxial growth). Suitable for rapid temperature rise and fall processes (such as RTP rapid annealing) to improve production efficiency. The thermal expansion coefficient of SiC is close to that of silicon (Si) and silicon carbide (SiC) wafers, reducing lattice defects caused by thermal stress.

Compatibility and design flexibility

SiC coatings can be deposited on substrates such as graphite, molybdenum, and carbon fiber, taking into account both lightness and high strength. Through CVD or spraying processes, complex structures of carriers (such as porous structures and embedded heating elements) can be prepared.