Silicon Carbide rauv tube

Semixlab provides Ultra-high purity SiC furnace tube system, semiconductor-grade thermal field solutions with 99.9999% coating purity and Complete line delivery.

Core value proposition

Provide a zero-pollution thermal environment for wafer manufacturing: 99.9% SiC purity of substrate + 99.9999% purity of CVD coating, combined with a complete SiC cantilever paddle & wafer boat system, to achieve zero metal pollution in the process chamber.

Different names for products:

High temperature SiC furnace tube;silicon carbide tube;High purity SiC tube;Silicon carbide tube for diffusion furnace;Silicon carbide tube for diffusion &LPCVD process;SiC tube for RTP,SiC tube for oxidation

Core specifications:

Material purity: The base material is silicon carbide with a purity of over 99.9%, and the purity after CVD coating is over 99.9999% (6N grade).

Thermal performance: Maximum operating temperature 1650℃ (long-term), coefficient of thermal expansion: 4.6×10⁻⁶/℃, uniformity in the constant temperature zone: ±1.5℃ (1200℃);

Mechanical strength: Bending strength 450Mpa(at room temperature).

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Thermal field carrier

Establish a stable and uniform temperature field within the range of 1200℃ to 1650℃ (the temperature difference in the constant temperature zone is ≤±1.5℃)

Ensure the thermodynamic conditions of processes such as diffusion, oxidation and annealing.

Pollution isolation barrier

Block the diffusion of metal ions (such as Fe/Ni/Cu, etc.) through high-purity materials (such as SiC).

Prevent cross-contamination between process gases and the external environment.

Process gas channel

Precisely control the flow direction and distribution of reaction gases (such as O₂/N₂/SiH₄, etc.)

Achieve uniform gas-phase reactions on the wafer surface (such as SiO₂ growth).

Photovoltaic coating: Support TOPCon/HJT cell PECVD process wafer transport.

Daim ntawv thov scenarios

● Epitaxy

● Oxidation/Diffusion

● LPCVD/PECVD process

● Annealing of III-V compound semiconductors

Solutions to industry pain points

Our solutions address the pain points of our customers:

1. High-temperature process particle contamination: 6N coating blocks impurity precipitation.

Frequent replacement of SiC in quartz components increases the corrosion resistance by 8 times.

2. CTE consistency design for thermal expansion mismatch of thermal field components in the entire series of SiC materials.

3. Ultra-polished surface treatment of metal contamination on the back of the wafer (Ra 0.2μm).

Core advantages of component technical specifications:

1. SiC furnace tube - Base material purity: 99.9% sintered silicon carbide

▶ Thermal shock resistance is enhanced by 3 times (rapid cooling > 1600℃)

The coefficient of thermal expansion is as low as 4.6×10⁻⁶/℃

Nanoscale coating - CVD deposition of 6N-grade high-purity SiC (99.9999%)

▶ Blocking the diffusion of metals such as Fe and Ni

▶ Surface roughness Ra < 0.5μm

2. SiC wafer Boat - Compatible with 12-inch wafers

- Multi-layer load-bearing design

▶ 100% thermal matching with furnace tubes

The wafer contamination rate is less than 0.01 ppb

3. Cantilever paddle system - isostatic graphite substrate +SiC coating

- Automatic alignment accuracy ±0.1mm

▶ Creep resistance life > 100,000 times

The transmission vibration is less than 5μm

Disruptive technological highlights

The Purity Revolution

Two-level protection system

The base layer is 99.9% SiC → to build a high-strength framework

The 6N-level CVD-SiC in the functional layer forms an atomic-level sealed
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Impurity control: Na/K < 0.1ppm, heavy metals < 5ppb, meeting the requirements of processes below 28nm

System synergy advantage

● Thermal field uniformity: Triple thermal coupling design of furnace tube + wafer boat + paddle blade, the temperature difference in the constant temperature zone (> 1200℃) is ≤±1.5℃

● Lifespan doubling: The entire solution extends the lifespan by 40% compared to the hybrid system, with MTBA exceeding 8,000 hours