High purity graphite rigid xav

High purity graphite rigid felt, the core thermal field material for the third generation semiconductor and advanced photovoltaic manufacturing, is a strategic product developed by Semixlab based on more than 20 years of carbon-based material research and development experience. Through breakthrough reinforcement technology and ultra-high temperature gradient graphitization process, the material achieves structural rigidity and environmental stability that traditional soft felt materials cannot achieve while maintaining the intrinsic excellent thermal properties of graphite. The manufacturing process begins with international advanced raw materials, after 1200℃ pre-carbonization to form a disorderly layer structure, the self-developed low ash phenolic resin is impregnated, and the complex shaped parts are prepared with 80MPa isostatic pressing technology. In an argon protected atmosphere, the body undergoes 72 hours of gradient graphitization at 2800℃, which promotes the rearrangement of carbon atoms to form a highly ordered crystal structure, and finally achieves the dimensional accuracy of ±0.05mm through the five-axis CNC machining center. A SiC gradient coating with a thickness of 50-200μm can be produced by chemical vapor deposition (CVD) to improve the oxidation resistance.

High purity graphite rigid felt shows excellent comprehensive performance in extreme thermal environment: its carbon content is ≥99.99% and ash value is strictly controlled within 65ppm, meeting the requirements of semiconductor grade cleanliness; Even at the high temperature of 2000℃, it still maintains a bearing capacity of ≥3MPa, successfully overcoming the industry problem that soft felt materials are easy to deform and collapse under high temperature conditions. Achieves precise temperature control accuracy in SiC single crystal growth furnace, which is 40% higher than the industry average, and effectively reduces the single crystal dislocation density below 500cm⁻². After 100 quenching and heating cycles from 2000℃ to room temperature, the shrinkage rate of the material line is always less than 0.5%, showing that the dimensional stability of traditional carbon felt is more than 3 times.

In the field of third-generation semiconductor manufacturing, the product has become the core component of the physical vapor transfer (PVT) SiC crystal growth furnace, its reinforced structure can withstand local high temperature of 3000℃ without structural creep, and with special SIC-Si composite coating, the oxidation resistance temperature can be raised to 1800℃. The vacuum degree of the single crystal furnace is stable at 5×10^-3Pa for a long time.

Technical Data_Carbon/Carbon Composite:

1. SiC single crystal growth Furnace (PVT method)

As the core heat insulation layer of all graphite crucible components, the axial temperature gradient control accuracy is ±0.3℃/mm; Growth chamber vacuum maintained < 5×10-3Pa; Single crystal dislocation density is reduced to < 500/cm².

2. Photovoltaic polycrystalline ingot furnace

Top thermal field insulation module reduces energy consumption by 35% (compared to traditional carbon felt solutions).

3. Third generation semiconductor epitaxy equipment

Integrated with MOCVD reaction chamber to achieve ±1℃ wafer level temperature uniformity.

Support 8-inch GaN-on-SiC epitaxial sheet mass production.

High temperature flexural strength: higher than the industry level, up to 150MPa.

Thermal cycles: up to 1000 times, much higher than the industry average.

Support for fully customized services: from material to shape, highly customizable.